Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Chongqing Boe Optoelectronics Technology Co., Ltd.

Seungmoo Rim

Ming Wang

Hongjiang Wu

Zhonghao Huang

Yongliang Zhao

Xi Chen

Xibin Shao

Jianfeng Yuan

Jiyu Wan

Chongxi Wei

Yiming Chen

Taeyup Min

Qiang Zheng

Jikai Zhang

The present disclosure is related to a display panel. The display panel may include a plurality of switch units. Each of the plurality of the switch units may include a first electrode; a second electrode; a third electrode; a fourth electrode opposite the first electrode; a piezoelectric material layer between the first electrode and the fourth electrode; a connecting electrode above the fourth electrode and electrically insulated from the fourth electrode; and a driving transistor comprising a driving gate. The driving gate may be the third electrode. An orthogonal projection of the second electrode and an orthogonal projection of the third electrode on a plane of the connecting electrode may overlap the connecting electrode respectively.

Switch unit, display panel, manufacturing method thereof, and display apparatus

A thin film transistor is disclosed. The thin-film transistor includes an active layer (); a source electrode (); and a drain electrode (). The active layer includes an active pattern region (), the active pattern region including a main body portion () and a plurality of protrusion portions () on both sides of the main body portion. The protrusion portions are connected to the main body portion.

Thin-film transistor and fabrication method thereof, array substrate and display device

An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate comprises a display region, at least two common electrode blocks are disposed at a periphery of the display region and conducted via a pixel electrode bridge line pattern.

Array substrate, method for fabricating the same and display device

The disclosed technology provides a manufacturing method of a target comprising obtaining an initial mass and a residual mass of the target sample, and calculating an etching mass; determining a relative etching depth of the target sample; calculating a relative etching mass based on the etching mass and the relative etching depth; determining a utilization parameter of the target sample based on the relative etching mass and the initial mass of the target sample before being used; and performing a simulation and optimization process on the utilization parameter of the target sample, obtaining target parameters corresponding to a preset value of the utilization parameter, and outputting the target parameters to a manufacturing control center for manufacturing a target. The disclosed technology also provides a manufacturing system of a target.

Manufacturing method and system of target

A color filter and a manufacturing method thereof are provided, in which a stacked structure composed of several color film layers having different colors is formed in a non-transmitting partitioning region of the color filter in such a way that the stacked structure can prevent light from passing through the color filter via the partitioning region.

Color filter and manufacturing method thereof

Growing community of inventors

Beijing, China

Seungmoo Rim