Samsung Electronics Co., Ltd.

Seungmok Shin

JinGyun Kim

Myoungbum Lee

Seung-Yup Lee

Kihyun Hwang

Sunjung Kim

Soodoo Chae

Kyung-Tae Jang

Yeon-Sil Sohn

ZongLiang Huo

Dae-Hun Choi

Chae Soodoo

A method of fabricating a semiconductor device including forming a charge storage layer, and forming a first tunnel insulating layer covering the charge storage layer, the forming of the first tunnel insulating layer including heat treating the charge storage layer.

Semiconductor device

Methods of manufacturing a three-dimensional semiconductor device are provided. The method includes: forming a thin film structure, where first and second material layers of at least 2n (n is an integer more than 2) are alternately and repeatedly stacked, on a substrate; wherein the first material layer applies a stress in a range of about 0.1&#xd7;109 dyne/cmto about 10&#xd7;109 dyne/cmto the substrate and the second material layer applies a stress in a range of about &#x2212;0.1&#xd7;109 dyne/cmto about &#x2212;10&#xd7;109 dyne/cmto the substrate.

Methods of manufacturing three-dimensional semiconductor memory devices

Method of fabricating semiconductor device

Provided are a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a stacked structure, a semiconductor pattern, an information storage layer, and a fixed charge layer. The stacked structure may be disposed over a semiconductor substrate. The stacked structure may include conductive patterns and interlayer dielectric patterns alternately stacked therein. The semiconductor pattern may be connected to the semiconductor substrate by passing through the stacked structure. The information storage layer may be disposed between the semiconductor pattern and the conductive patterns. The fixed charge layer may be disposed between the semiconductor pattern and the interlayer dielectric pattern. The fixed charge layer may include fixed charges. Electrical polarity of the fixed charges may be equal to electrical polarity of majority carriers of the semiconductor pattern.

Nonvolatile memory device having a fixed charge layer

Provided is a method of forming a nonvolatile memory device. The method may include alternatingly stacking n number of dielectric layers and n number of conductive layers on a substrate, forming a non-photosensitive pattern on the alternatingly stacked dielectric layers and conductive layers, etching the i-th conductive layer and i-th dielectric (2&#x2266;i&#x2266;n, i is a natural number indicating a stacking order of the conductive layers and the dielectric layers) by using the non-photosensitive pattern as an etch mask, laterally etching a sidewall of the non-photosensitive pattern and etching the i-th conductive layer, (i&#x2212;1)-th conductive layer, i-th dielectric layer and (i&#x2212;1)-th dielectric layer by using the etched non-photosensitive pattern as an etch mask.

Method of forming nonvolatile memory device

Some embodiments of the present invention provide nonvolatile memory devices including a plurality of intergate insulating patterns and a plurality of cell gate patterns that are alternately and vertically stacked on a substrate, an active pattern disposed on the substrate, the active pattern extending upwardly along sidewalls of the intergate insulating patterns and the cell gate patterns, a plurality of charge storage patterns disposed between the plurality of cell gate patterns and the active pattern, respectively, the plurality of the charge storage patterns being separated from each other, tunnel insulating patterns disposed between the plurality of cell gate patterns and the active pattern, respectively, and the tunnel insulating patterns extending to be directly connected to each other and a plurality of blocking insulating patterns disposed between the plurality of cell gate patterns and the plurality of charge storage patterns, respectively. A sidewall of the cell gate pattern may be recessed laterally so that an undercut region is defined and the charge storage pattern is disposed in the undercut region.

Growing community of inventors

Yongin-si, South Korea

Seungmok Shin