Samsung Electronics Co., Ltd.

Adeka Corporation

Seungmin Ryu

Younjoung Cho

Younsoo Kim

Gyuhee Park

Takanori Koide

Yutaro Aoki

Wakana Fuse

Haeryong Kim

Jeonggyu Song

Kyooho Jung

Sunmin Moon

Hiroyuki Uchiuzou

Kazuki Harano

Kazuya Saito

Yoshiki Manabe

Changsu Woo

Soyoung Lee

Hyunwoo Kim

Akio Saito

Atsushi Yamashita

Kiyoshi Murata

Jaesoon Lim

Haruyoshi Sato

Jaewoon Kim

An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

Organometallic compound and method of manufacturing integrated circuit using the same

An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I):

Organometallic adduct compound and method of manufacturing integrated circuit using the same

An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):

Yttrium compound and method of manufacturing integrated circuit device by using the same

A method of forming an oxide film including two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element, providing an electron donor compound to be bonded to the first source material, providing a second source material on the substrate after the providing of the electron donor compound, the second source material including a second central element, and providing an oxidant on the substrate.

Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor device

A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: 

Niobium compound and method of forming thin film

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