Samsung Electronics Co., Ltd.

Seungkyung Ro

Heewon Lee

Chanha Kim

Jinwook Lee

Sangkwon Moon

Yunjung Lee

Donggi Lee

Seongnam Kwon

Hyunkyo Oh

Kwangwoo Lee

Oak-Ha Kim

Hong Rak Son

Donghwan Lee

Junjin Kong

Jisoo Kim

Changkyu Seol

Pilsang Yoon

Kangho Roh

Jong-Nam Baek

Su Chang Jeon

Woohyun Kang

Jinwoo Hong

Sung-Hwan Bae

Suk-Eun Kang

Juwon Lee

Sari Go

Sang-Hwa Han

Disclosed is a nonvolatile memory device which include a memory cell array including a plurality of memory cells connected to a plurality of word lines, an address decoder that controls a selected word line among the plurality of word lines based on an address received from an external device including a first temperature sensor, a second temperature sensor that measures a read temperature of first memory cells connected to the selected word line from among the plurality of memory cells, and a temperature compensation circuit that calculates a read level offset based on the read temperature and a program temperature of the first memory cells measured by the first temperature sensor and generates a compensation read voltage based on the read level offset. The address decoder is further configured to provide the compensation read voltage to the selected word line.

Nonvolatile memory device and operation method thereof

A storage device and an operating method thereof are provided. The storage device includes a non-volatile memory and a memory controller. The non-volatile memory includes memory blocks each including a word lines. The memory controller determines a word line strength of each of the word lines, adjusts a state count of each of the word lines based on the word line strengths, and adjust a program parameter of each of the word lines to decrease a program time variation between the word lines.

Storage device and operating method thereof

A storage device includes a nonvolatile memory device including a memory block and a memory controller. The memory block includes a first memory region connected with a first word line and a second memory region connected with a second word line. The memory controller sets a read block voltage based on a first read voltage of the first memory region. The memory controller determines a second read voltage of the second memory region based on variation information and the read block voltage.

Storage device including nonvolatile memory device and operating method thereof

A storage device includes a nonvolatile memory device including a plurality of memory blocks, each including a plurality of memory cells connected to a plurality of word lines, and a controller configured to perform a first read operation on memory cells connected to a selected word line included in a selected memory block based on a request of an external host device. The controller is further configured to perform a check read operation that checks a reliability of the memory cells of the selected memory block after performing the first read operation. In the check read operation, the controller is further configured to select and perform one of an actual check and a machine learning-based check.

Storage device and operating method of storage device

A memory system includes multiple storage devices that each include a nonvolatile memory device. A client device is configured to collect deterioration information of the nonvolatile memory devices provided from the storage devices. A server device is configured to receive the collected deterioration information and to predict a degree of deterioration of the nonvolatile memory devices in real time by performing machine learning based on the collected deterioration information and initial deterioration information. The client device determines a read level of the nonvolatile memory device based on the degree of deterioration of the nonvolatile memory devices from the server device. The storage device sets the nonvolatile memory device to operate based on the read level determined in the client device.

Storage device, memory system, and read voltage decision method thereof

A storage device includes a nonvolatile memory device, a buffer memory, a controller and a neuromorphic chip. The neuromorphic chip is configured to generate an access classifier based on the access result information and the access environment information. The controller is configured to perform first accesses to the nonvolatile memory device using the buffer memory and to collects the access result information and the access environment information of the first accesses in the buffer memory. The controller is configured to perform a second access of the nonvolatile memory device using the buffer memory. The controller is configured to obtain a prediction result of access parameters associated with the second access by using access environment information associated with the second access and the access classifier.

Storage device including nonvolatile memory device and access method for nonvolatile memory device

A storage device includes a nonvolatile memory device and a controller. The nonvolatile memory device includes multiple memory blocks, each of which includes memory cells. The controller reads data from selected memory cells of a memory block selected from the memory blocks during a read operation. The selected memory cells correspond to both a word line and a string selection line selected as a read target. The controller increases a read count by a read weight corresponding to the selected word line and string selection line of the selected memory block, and performs a refresh operation on the selected memory cells if the read count reaches a threshold value. In the selected memory block, two or more read weights are assigned according to locations of the string selection lines and the word lines.

Storage device including nonvolatile memory device and controller with varied read weights

A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.

Storage devices including nonvolatile memory devices and access methods for nonvolatile memory devices

An operation method of a storage device including a nonvolatile memory and a memory controller controlling the nonvolatile memory, includes transmitting a multi-program command to the nonvolatile memory by the memory controller; and programming memory cells connected to two or more word lines by the nonvolatile memory in response to the multi-program command.

Operating method for nonvolatile memory and operating method for storage device including the nonvolatile memory

A method of a operating a data storage device including a nonvolatile memory device and a memory controller is provided. The method includes reading a first selection transistors connected to a first selection line from among a plurality of selection lines with a reference voltage, determining whether a first number of selection transistors, from among the first selection transistors, which have a threshold voltage less than the reference voltage is larger than a first reference value, and if the first number is larger than the first reference value, programming the first selection transistors to have threshold voltage larger than or equal to a target voltage.

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Anyang-si, South Korea

Seungkyung Ro