Micron Technology Incorporated

Sandisk Technologies Inc.

Emc IP Holding Company LLC

Sandisk Enterprise IP LLC

Dell Products Inc.

Seungjune Jeon

Zhenming Zhou

Jiangli Zhu

Zhenlei Shen

Charles See Yeung Kwong

Tingjun Xie

Haleh Tabrizi

Ying Yu Tai

Juane Li

Andrew Cullen

Idan Alrod

Murong Lang

Fangfang Zhu

Ning Chen

Wei Wang

Xiaoheng Chen

Eran Sharon

Dana Lee

Zhengang Chen

Steven S Cheng

Qing Li

Li-Te Chang

Xiaoyu Yang

Justin L Ha

Vamsi Pavan Rayaprolu

Sergey Anatolievich Gorobets

Nian Niles Yang

Steven Theodore Sprouse

Chris Avila

Yang Liu

Frederick K H Lee

Zhongguang Xu

Jonathan Hsu

Charles S Kwong

Yueh-Hung Chen

Ryan Takafuji

Alan Hanson

Michael Rijo

Samuel Hudson

Jinagli Zhu

Yeuh Yale Ma

A processing device in a memory sub-system determines one or more read margin levels associated with the memory device. A machine learning model is applied to the one or more read margin levels to generate a read margin prediction value associated with the memory device. Based on the margin prediction value, the memory device is assigned to a selected bin of a set of bins. A media scan operation is executed on the memory device in accordance with a scan frequency associated with the selected bin.

Adaptive scanning of memory devices with supervised learning

A first blocks of a set of blocks of a memory device is identified. A die on which the first block resides is identified among a plurality of dies of the memory device. A threshold value associated with the die is selected from a range associated with a projected reliability metric of the die. Responsive to determining that an endurance metric value associated with the die matches the threshold value, a program operation is performed with respect to a second block of the set of blocks.

Adaptive wear leveling for endurance compensation

A plurality of memory device life metrics are determined, where one of the plurality of memory device life metrics comprises a read count metric that specifies a number of read operations performed on the memory device. A plurality of normalized metric values are calculated, where each of the normalized metric values is based on a ratio of a respective memory device life metric to a respective lifetime target value associated with the respective memory device life metric. A normalized metric value that satisfies a selection criterion is identified from the plurality of normalized metric values. The identified normalized metric value corresponds to an amount of used device life of the memory device. An amount of remaining device life of the memory device is determined based on the identified normalized metric value. An indication of the amount of remaining device life is provided to a host system.

Monitoring memory device health according to data storage metrics

A request to write host data to a memory device of a memory sub-system is received. Redundancy metadata associated with the host data is generated. A determination of a first status associated with the host data is made. The redundancy metadata associated with the host data is updated to indicate at least the first status associated with the host data. A memory access operation is performed to write the host data and the updated redundancy metadata to the memory device.

Tracking host-provided metadata in a memory sub-system

Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device performs operations comprising responsive to receiving a memory access command, determining a portion of the memory device that is referenced by a logical address specified by the memory access command; determining an endurance factor associated with the portion; and modifying, based on a value derived from the endurance factor, a media management metric associated with the portion of the memory device.

Deck based media management operations in memory devices

A method includes performing a memory operation to access memory cells of a memory sub-system. The method can further include determining, for the memory operation, a quantity of memory cells available to be accessed during the performance of the memory operation. The method can further include determining that a quantity of memory cells that are accessed during the performance of the memory operation comprises fewer than the quantity of memory cells available to be accessed. The method can further include incrementing a counter in response to the determination that the quantity of memory cells accessed is fewer than the quantity of memory cells available to be accessed.

Write determination counter

Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising performing a data integrity check on a set of memory cells of a source management unit of the memory device to obtain a data integrity metric value; determining whether the data integrity metric value satisfies a first threshold; responsive to determining that the data integrity metric value fails to satisfy the first threshold, determining whether the data integrity metric value satisfies a second threshold that is lower than the first threshold; responsive to determining that the data integrity metric value satisfies the second threshold, causing the memory device to copy data from the source management unit to a destination set of pages of the memory device; and performing a subsequent data integrity check on one or more invalid pages of the source management unit.

Performing block-level media management operations for block stripes in a memory device

A processing device in a memory sub-system determines whether a media endurance metric associated with a memory block of a memory device satisfies one or more conditions. In response to the one or more conditions being satisfied, one or more read margin levels corresponding to a page type associated with the memory device are determined. A machine learning model is applied to the one or more read margin levels to generate a margin prediction value based on the page type and a wordline group associated with the memory device. Based on the margin prediction value, the memory device is assigned to a selected bin of a set of bins. A media scan operation is executed on the memory device in accordance with a scan frequency associated with the selected bin.

A set of blocks of a memory device comprising a plurality of dies is identified. A block within the set of blocks is identified. The identified block is associated with a capability metric that reflects a projected reliability of the die on which the block resides. Responsive to determining that the capability metric satisfies a condition, a cycle threshold associated with the die is identified. Responsive to determining that a cycle count value derived from a program/erase cycle counter associated with the die matches the cycle threshold, the set of blocks is updated by excluding the block from the set of blocks. A program operation is performed with respect to the updated set of blocks.

A request is received to program host data to a memory device of a memory sub-system. The host data is associated with a logical address. A redundancy factor that corresponds to the logical address associated with the host data is obtained. A first physical address associated with a first set of cells of the memory device and a second physical address associated with a second set of cells of the memory device are determined based on the redundancy factor. The first set of memory cells is to store the host data and the second set of memory cells is to store redundancy metadata associated with the host data. The host data is programmed to the first set of memory cells. The redundancy metadata associated with the host data is programmed to the second set of memory cells.

Redundancy metadata media management at a memory sub-system

An apparatus includes an error read flow component resident on a memory sub-system. The error read flow component can cause performance of a plurality of read recovery operations on a group of memory cells that are programmed or read together, or both. The error read flow component can determine whether a particular read recovery operation invoking the group of memory cells was successful. The error read flow component can further cause a counter corresponding to each of the plurality of read recovery operations to be incremented in response to a determination that the particular read recovery operation invoking the group of memory cells was successful.

Error read flow component

A predefined data pattern is written using a plurality of values of a memory access parameter. A corresponding value of a data state metric associated with each value of a plurality of values of the memory access operation parameter is measured. An optimal value of the memory access operation parameter is selected from the plurality of values of the memory access operation parameter.

Optimizing memory access operation parameters

A request to read data at the memory device is received. A first read operation is performed to read the data at the memory device using a first read threshold voltage. The data read at the memory device using the first read threshold voltage is determined to be associated with a first unsuccessful correction of an error. Responsive to determining that the data read at the memory device using the first read threshold voltage is associated with the first unsuccessful correction of the error, a second read threshold voltage is stored at a register to replace a preread threshold voltage previously stored at the register that is associated with the memory device. The first preread threshold voltage was previously used to perform a preread operation at the memory device. A second read operation to read the data at the memory device is performed using the second read threshold voltage.

Preread and read threshold voltage optimization

A memory access operation performed on a first memory unit of a memory device is detected. A counter associated with the first memory unit is modified. It is determined that the counter satisfies a threshold criterion, wherein the threshold criterion is based on a random or pseudo-random number within a margin of an average number of memory access operations. A refresh operation is performed on a second memory unit.

Managing write disturb for units of memory in a memory sub-system using a randomized refresh period

A method includes providing, via a command, a request of enablement of a media management operation to a memory sub-system. The method further includes providing, via the command, an indication of one of a plurality of write types to the media management operation to the memory sub-system. The media management operation can be performed using the indicated write type in response to receipt of the command.

Growing community of inventors

Santa Clara, CA, United States of America

Seungjune Jeon