Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Seungjun Kim

Jongchul Park

Keon Jae Lee

Young-Ju Park

Keunhee Bai

Hak-Sun Lee

Sang Yong Lee

Seungju Park

Kwi-Il Park

Suk Joong L Kang

Jaemyung Chang

A method for forming a fine pattern includes forming line patterns and a connection pattern on a semiconductor substrate, the line patterns extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, and the connection pattern connecting portions of the line patterns adjacent to each other in the second direction, and performing an ion beam etching process on the connection pattern. The ion beam etching process provides an ion beam in an incident direction parallel to a plane defined by the first direction and a third direction perpendicular to a top surface of the semiconductor substrate, and the incident direction of the ion beam is not perpendicular to the top surface of the semiconductor substrate.

Method for forming a fine pattern

A method of manufacturing a flexible piezoelectric device including laminating a first metal layer on a silicon oxide layer on a silicon substrate. The method further includes laminating a device on the first metal layer and annealing the first metal layer to oxidize the first metal into a first metal oxide. The method further includes etching the first metal oxide to separate the device from the silicon oxide layer and transferring the separated device to a flexible substrate using a transfer layer. The metal oxide layer laminated on the silicon substrate is etched to separate the device from the substrate. As a result, physical damage of the silicon substrate is prevented and a cost of using expensive single-crystal silicon substrate is reduced.

Method of manufacturing a flexible piezoelectric device

Growing community of inventors

Daejeon, South Korea

Seungjun Kim