Samsung Electronics Co., Ltd.

Seungjoo Nah

Heegeun Jeong

Hoemin Jeong

Jung-Chak Ahn

Kyung-ho Lee

Wonmo Chun

Jinyoung Kim

Jung-Saeng Kim

Minho Jang

Junetaeg Lee

Dongmin Han

Kyeongjae Byeon

Sunyoung Bang

Mihye Jang

An image sensor includes first through fourth pixels. The first pixel includes a first color filter, a first photoelectric conversion device (PD), and a first microlens. The second pixel includes a second PD and a first filling portion. The third pixel includes a third PD and a second filling portion. The fourth pixel includes a fourth PD, a second microlens, and a second color filter different from the first color filter. The second pixel is adjacent to the first pixel. The third pixel is adjacent to the second pixel. The second and third pixels do not comprise any one of a red, blue, and green color filter. Each of the first and second filling portions is configured to transmit light of wavelengths corresponding to blue, red, and green to the second and third PDs, respectively. The first color filter is configured to transmit light of the wavelength corresponding to blue.

Image sensor and manufacturing process thereof

An image sensor includes a substrate including a first region and a second region surrounding the first region, a light sensing element in the substrate, a planarization layer on the light sensing element, a color filter array layer including color filters on the planarization layer on the first region of the substrate, a light blocking metal pattern on the planarization layer on the second region of the substrate, a dummy color filter layer on the light blocking metal pattern on a portion of the second region adjacent to the first region of the substrate, and microlens on the color filter array layer. Active pixels are in the first region, and optical black (OB) pixels are in the second region.

Image sensor and method of manufacturing the same

An image sensor includes: a substrate including a plurality of first and second pixels; a light blocking pattern providing a plurality of first spaces respectively disposed on the first pixels and at least one second space disposed on the plurality of second pixels; a plurality of color filters respectively disposed in the plurality of first spaces; and a microlens layer including a plurality of first microlenses respectively disposed on the plurality of color filters, at least one filling portion disposed in the at least one second space, and at least one second microlens disposed on the at least one filling portion, wherein the microlenses are disposed at the same height as each other, and wherein the at least one filling portion and the at least one second microlens comprise an integrated structure without an interface between the at least one filling portion and the at least one second microlens.

An image sensor includes a first structure including a first substrate, and a first internal wiring structure on the first substrate. The first substrate includes an active pixel region and a through electrode region around the active pixel region. The first internal wiring structure includes a plurality of first internal wiring patterns. The image sensor further includes a second structure including a second substrate and a second internal wiring structure on the second substrate. The second substrate is arranged on the first substrate. The image sensor additionally includes a through electrode layer arranged in the through electrode region to at least partially fill a through electrode trench, which penetrates the first substrate, and to connect the first internal wiring structure to the second internal wiring structure.

Image sensor including a back via stack

An image sensor includes: a substrate having a first surface and a second surface that are opposite to each other; a plurality of color filters on the substrate; a fence pattern between adjacent color filters of the plurality of color filters; and a protective layer between the substrate and the plurality of color filters, wherein the protective layer covers the fence pattern. The fence pattern includes: a first fence pattern having a first bottom surface and a first top surface that are opposite to each other; and a second fence pattern on the first top surface of the first fence pattern. A width at the first bottom surface of the first fence pattern is less than a width of the second fence pattern, and the protective layer covers a sidewall of the first fence pattern.

Image sensor including a fence pattern

A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

Semiconductor image sensors having channel stop regions and methods of fabricating the same

A device includes first patterns, second patterns, and a second sample pattern on a semiconductor substrate. The second patterns are horizontally spaced apart at an equal interval from the second sample pattern. The second sample pattern includes first and second sidewall facing each other, a first point on the first sidewall, and a second point on the second sidewall. The second sample pattern and the most adjacent first pattern in relation to the second sample pattern are spaced apart from each other at a first horizontal distance in a direction parallel to a line connecting the first point and the second point. The first horizontal distance is greater than a second horizontal distance in the direction between one second pattern of the second patterns and a most adjacent first pattern in relation to the one second pattern.

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Buk-gu, South Korea

Seungjoo Nah