Samsung Electronics Co., Ltd.

Yonsei University

SeungHyun Lim

Kihyun Hwang

Jaeyoung Ahn

Bio Kim

Dongwoo Kim

Kwang Soo Seol

Ji-Hoon Choi

Dae Sin Kim

Homin Son

Daewoong Kang

Woong Hee Lee

Gunhee Han

Sangryol Yang

Chaeho Kim

Jung Ho Kim

Jiwon Park

Sunghoi Hur

Kwangmin Park

Sunggil Kim

Jinyoung Choi

Hanmei Choi

Seulye Kim

Jaehun Jung

Toshiro Nakanishi

Youngcheol Chae

Hyun-Jin Shin

Soodoo Chae

Young-jin Noh

Jintae Noh

Dongkyum Kim

HongSuk Kim

Zhiliang Xia

Hyunjun Sim

Jumi Yun

Jeonghwan Lee

Hunhyeong Lim

Hyun-Wook Lee

Dongmyung Lee

Minseok Jo

Changsub Lee

Nambin Kim

Ji Min Cheon

JaeHo Choi

Inhee Lee

Seungje Kim

Jinkyung Son

Jaepo Lim

A semiconductor device is provided. The semiconductor device includes: a substrate with an active region extending in a first direction; an element isolation layer, adjacent to the active region, in the substrate; a gate electrode on the substrate and extending in a second direction which crosses the first direction; a plurality of channel layers on the active region, spaced apart from each other along a third direction perpendicular to an upper surface of the substrate, and surrounded by the gate electrode; and a source/drain region provided in a recess of the active region adjacent to the gate electrode, and connected to the plurality of channel layers. In the first direction, the gate electrode has a first length on the active region and a second length, greater than the first length, on the element isolation layer.

Semiconductor devices

A semiconductor device is provided. The semiconductor device includes a stack structure comprising insulating patterns and electrode structures alternately stacked on a substrate, and a vertical channel structure vertically penetrating the stack structure. Each of the electrode structures includes a conductive pattern having a first sidewall and a second sidewall opposite to the first sidewall, a first etching prevention pattern on the first sidewall, and a second etching prevention pattern on the second sidewall.

Semiconductor device and method for fabricating the same

A semiconductor memory device includes a stack including gate electrodes sequentially stacked on a substrate, a vertical insulating structure penetrating the stack vertically with respect to the gate electrodes, a vertical channel portion disposed on an inner side surface of the vertical insulating structure, and a common source region formed in the substrate and spaced apart from the vertical channel portion. A bottom region of the vertical channel portion has a protruding surface in contact with a bottom region of the vertical insulating structure.

Three-dimensional semiconductor memory device and method of fabricating the same

A semiconductor memory device includes a stack including gate electrodes and insulating layers that are alternately and repeatedly stacked on a substrate. A cell channel structure penetrates the stack. The cell channel structure includes a first semiconductor pattern contacting the substrate and a first channel pattern on the first semiconductor pattern. The first semiconductor pattern extends to a first height from a surface of the substrate to a top surface of the first semiconductor pattern. A dummy channel structure on the substrate and spaced apart from the stack. The dummy channel structure includes a second semiconductor pattern contacting the substrate and a second channel pattern on the second semiconductor pattern. The second semiconductor pattern extends to a second height from the surface of the substrate to a top surface of the second semiconductor pattern. The first height is greater than the second height.

Semiconductor memory device and method of fabricating the same

Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes, an active pillar provided to penetrate the gate electrodes and the insulating patterns and electrically coupled with the substrate, and a memory pattern provided between the gate electrodes and the active pillar and between the insulating patterns and the active pillar. The gate electrodes include edge portions extending between the memory pattern and the insulating patterns.

Semiconductor device

A non-volatile memory device includes gate electrodes stacked on a substrate, a semiconductor pattern penetrating the gate electrodes and connected to the substrate, and a charge storage layer between the semiconductor pattern and the gate electrodes. The charge storage layer includes a first charge storage layer between the semiconductor pattern and the gate electrodes, a second charge storage layer between the first charge storage layer and the semiconductor pattern, and a third charge storage layer between the first charge storage layer and the gate electrodes. An energy band gap of the first charge storage layer is smaller than those of the second and third charge storage layers. The first charge storage layer is thicker than the second and third charge storage layers.

Non-volatile memory devices including charge storage layers

A semiconductor device includes a stack comprising insulating patterns vertically stacked on a substrate and gate patterns interposed between the insulating patterns, an active pillar passing through the stack and electrically connected to the substrate and a charge storing layer interposed between the stack and the active pillar. The charge storing layer includes a first portion between the active pillar and one of the gate patterns, a second portion between the active pillar and one of the insulating patterns, and a third portion joining the first portion to the second portion and having a thickness less than that of the first portion.

Vertical memory devices having charge storage layers with thinned portions

A nonvolatile memory device includes a gate structure including inter-gate insulating patterns that are vertically stacked on a substrate and gate electrodes interposed between the inter-gate insulating patterns, a vertical active pillar connected to the substrate through the gate structure, a charge-storing layer between the vertical active pillar and the gate electrode, a tunnel insulating layer between the charge-storing layer and the vertical active pillar, and a blocking insulating layer between the charge-storing layer and the gate electrode. The charge-storing layer include first and second charge-storing layers that are adjacent to the blocking insulating layer and the tunnel insulating layer, respectively. The first charge-storing layer includes a silicon nitride layer, and the second charge-storing layer includes a silicon oxynitride layer.

Nonvolatile memory devices and methods of fabricating the same

Nonvolatile memory devices include a vertical stack of nonvolatile memory cells. The vertical stack of nonvolatile memory cells includes a first nonvolatile memory cell having a first gate pattern therein, which is separated from a vertical active region by a first multi-layered dielectric pattern having a first thickness, and a second nonvolatile memory cell having a second gate pattern therein, which is separated from the vertical active region by a second multi-layered dielectric pattern having a second thickness. The second gate pattern is also separated from the first gate pattern by a distance less than a sum of the first and second thicknesses.

Three dimensional semiconductor memory devices and methods of manufacturing the same

Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper portion of the active pattern, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.

Three dimensional semiconductor memory devices and methods of forming the same

According to the present invention, a switched capacitor circuit comprises: an inverting amplifier for removing the offset by using a chopper stabilization circuit; a sampling unit which is connected between an input terminal and the inverting amplifier; and a feedback unit which is connected to the inverting amplifier in parallel.

Switched capacitor circuit

Provided are three-dimensional semiconductor devices. The device includes conductive patterns stacked on a substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern includes a first doped region disposed adjacent to at least one of the conductive patterns, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.

Three-dimensional semiconductor memory devices

An analog-to-digital converter includes a &#xbd; powered signal generator configured to generate divided signals by successively dividing a full scale signal by 2 and output one of the divided signals, an accumulator configured to update a reference signal according to a current divided signal and a current output bit, and a comparator configured to compare the updated reference signal with an input signal and generate a next output bit.

Analog-to-digital converter for accumulating reference voltages successively divided by two

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Seoul, South Korea

SeungHyun Lim