Samsung Electronics Co., Ltd.

Hyundai Motor Company

Kia Corporation

Sungkyunkwan University

Hawseung Material Co., Ltd.

Seunghyun Cho

Youngsik Kim

Sang Hyun Lee

Kwang-Ho Kim

Hyunjoong Kim

Jihyun Choi

Junhui Lee

Sangyun Kim

Joonsik Sohn

Gongheum Han

Soowoong Ahn

Sunggeun Do

Woongjae Song

Jihwan Yu

Hyungjin Kim

June Hyung Lee

Reum Oh

June Young Lee

Yongyi Kim

Sungmin Hong

Taegyun Kim

Youngju Kim

Ho Dong Kim

Jaekyu Shim

Junghyun Kang

Kijung Kim

Shinhun Moon

Kyoung-Min Hong

Yujung Song

JeeHoon Seong

Seongho Hong

Bumyong Yoon

Jonghwan Suhr

Younghwa Kim

An electronic device is provided. The electronic device includes a housing, a button member which is coupled to the housing and at least a portion of which is exposed to the outside of the housing, a bracket which is disposed inside the housing and on which a circuit board is mounted, a connection member which is disposed in the bracket and is electrically connected to the circuit board, and a conductive structure which is disposed in one portion of the connection member so as to be in contact with the button member, and which is electrically connected to the connection member and the button member, wherein the conductive structure comprises a contact portion in contact with the button member and a fixed portion which extends from the contact portion to the connection member so as to space the contact portion and the connection member apart from each other.

Electronic device comprising electrode button

A memory device includes a memory cell array having a plurality of memory cells therein that span a plurality of rows, which are grouped into segments, and a plurality of columns, which are grouped into ticks. The ticks include normal ticks, and a spare tick that spans at least one redundancy column of memory cells in the memory cell array. A repair circuit is provided, which is configured to: (i) repair a first source address of a first failed column, which spans a plurality of the segments, with a first destination address of a pass column in one of the normal ticks, and then (ii) further repair the first destination address of the pass column with a first redundancy column within the spare tick that corresponds to the first destination address.

Memory device including flexible column repair circuit

A semiconductor memory device includes a memory cell array, a row decoder and a timing/voltage control circuit. The memory cell array is divided into a plurality of row blocks by one or more row block identity bits, and each of the of row blocks includes sub-array blocks arranged in a first direction. A row address includes the one or more row block identity bits. The row decoder activates a first word-line coupled to a first memory cell, activates a second word-line coupled to a second memory cell in response to the row address, and outputs a row block information signal. The timing/voltage control circuit adjusts at least one of an operation interval and an operation voltage of a memory operation on the first memory cell and the second memory cell according to a distance in a second direction crossing the first direction from a reference position, based on the row block information signal.

Semiconductor memory device and method of adjusting operation condition of the same

A memory device includes a word line driver circuit, which can advantageously reduce gate stress on a transistor using a lower high voltage that varies with a command, and an operating method of the memory device. The memory device includes a plurality of memory blocks, provides a high voltage or the lower high voltage to a variable high voltage line in response to a block select signal, and changes a level of the lower high voltage to a low voltage level, a medium voltage level, or a high voltage level based on the command. The memory device applies the lower high voltage to gates of P-type metal oxide semiconductor (PMOS) transistors connected to a word line driving signal, which drives word lines of non-selected memory blocks among the plurality of memory blocks.

Word line driver circuits for memory devices and methods of operating same

A wearable electronic device, for example a smart watch, has an optical sensor module disposed near a side of the device meant to face the wearer. The device also includes a wireless charging module. The optical sensor and wireless charging modules are at least partially integrated together via a flexible printed circuit board ('FPCB') which is connected to both modules. The wireless charging module surrounds the FPCB of the optical sensor module, thus allowing a reduction in thickness of the wearable device and further allowing simplification in a process of assembly of the device.

Wearable electronic device with an optical sensor module integrated with a wireless charging module

Various embodiments of the present invention relate to an electronic device for performing voice recognition using microphones selected on the basis of the operation state, and an operation method of same. According to an embodiment, the electronic device includes: one or more microphone arrays which include a plurality of microphones; at least one processor operatively connected to the microphone arrays; and at least one memory electrically connected to the processor, wherein the memory may store instructions for the processor to, at the time of execution; receive wake-up utterances, for calling designated voice services, by using a first group of microphones among the plurality of microphones when operating in a first state; operate in a second state in response to the wake-up utterances; and receive subsequent utterances using a second group of microphones among the plurality of microphones when operating in the second state. Various other embodiments are also possible.

Electronic device for performing voice recognition using microphones selected on basis of operation state, and operation method of same

A thermoplastic elastomer composition includes about 80 parts by weight of an ethylene propylene diene monomer (EPDM) including 5-ethylidene-2-norbornene (ENB) and polyethylene, about 30 parts by weight to about 70 parts by weight of polypropylene, about 20 parts by weight to about 40 parts by weight of a filler, and about 60 parts by weight to about 90 parts by weight of a plasticizer.

Thermoplastic elastomer composition and thermoplastic elastomer manufactured by using the same

According to some example embodiments of the inventive concepts, there is provided a method of operating a stacked memory device including a plurality of memory dies stacked in a vertical direction, the method including receiving a command and an address from a memory controller, determining a stack ID indicating a subset of the plurality of memory dies by decoding the address, and accessing at least two memory dies among the subset of memory dies corresponding to the stack ID such that the at least two memory dies are non-adjacent.

Stacked memory device and operating method thereof

An electronic device is provided. The electronic device includes a housing, a printed circuit board disposed inside the housing and including a first face and a second face that faces away from the first face, a connection member disposed on the first face and electrically connected to the printed circuit board, a switch member disposed on the first face and at least partially overlaps the connection member when viewed from above the first face, and a button member including an electrically conductive member, and disposed to be capable of operating the switch member. The electrically conductive member is electrically connected to the connection member.

Electronic device including electrically conductive connection member

Disclosed is a three-dimensional semiconductor device including a stack structure on a substrate and including electrodes that are vertically stacked on top of each other on a first region of a substrate, a vertical structure penetrating the stack structure and including a first semiconductor pattern, a data storage layer between the first semiconductor pattern and at least one of the electrodes, a transistor on a second region of the substrate, and a first contact coupled to the transistor. The first contact includes a first portion and a second portion on the first portion. Each of the first portion and the second portions has a diameter that increases with an increasing vertical distance from the substrate. A diameter of an upper part of the first portion is greater than a diameter of a lower part of the second portion.

Three-dimensional semi-conductor memory devices including a first contact with a sidewall having a stepwise profile

Three-dimensional semiconductor memory devices including first contact having a stepwise profile at interface between two portions

Growing community of inventors

Suwon-si, South Korea

Seunghyun Cho