Entegris, Inc.

SeungHyun Chae

SeongJin Hong

WonLae Kim

Eric Hong

Juhee Yeo

JeongYeol Yang

Emanuel Israel Cooper

Michael L White

Daniela White

Steven Lippy

Atanu Das

Compositions useful for the selective etching, i.e., removal, of metal oxide hard masks such as zirconium oxide and hafnium oxide, often used as hard masks in microelectronic devices, in the presence of other materials such as polysilicon, silicon dioxide, silicon nitride, and tungsten are provided.

Selective removal of metal oxide hard masks

Provided are compositions and methods for selectively etching titanium nitride, generally leaving molybdenum present unaffected by the process, as well as any aluminum oxide, silicon dioxide, and polysilicon which may be present on the device. In general, the compositions of the invention were able to achieve titanium nitride etch rates exceeding 3.5 Å/minute, thereby providing uniform recess top and bottom layers in patterns.

Nitride etchant composition and method

An etchant composition and method for etching molybdenum from a microelectronic device at an etch rate are described. A microelectronic device is contacted with an etchant composition for a time sufficient to at least partially remove the molybdenum. The etchant composition comprises at least one oxidizing agent, at least one oxidizing agent stabilizer, and at least one base and has a pH of from 7.5 to 13. The etchant composition selectively removes molybdenum at an etch rate of 5-200 &#x212b;/min.

Method and composition for etching molybdenum

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Gunpo, South Korea

SeungHyun Chae