Samsung Electronics Co., Ltd.

Seunghoon Yeon

Hyoeun Kim

Chajea Jo

Yonghoe Cho

Namhoon Kim

Ohguk Kwon

Jongbo Shim

Sunkyoung Seo

Sang-Uk Han

Ji Hwang Kim

Sanguk Han

Won Il Lee

Jisun Yang

Wonil Lee

A semiconductor package includes a first semiconductor chip comprising a semiconductor substrate and a redistribution pattern on a top surface of the semiconductor substrate, the redistribution pattern having a hole exposing an inner sidewall of the redistribution pattern, a second semiconductor chip on a top surface of the first semiconductor chip, and a bump structure disposed between the first semiconductor chip and the second semiconductor chip. The bump structure is disposed in the hole and is in contact with the inner sidewall of the redistribution pattern.

Semiconductor package

A semiconductor package includes at least one second semiconductor chip stacked on a first semiconductor chip. An underfill layer is interposed between the first semiconductor chip and the at least one second semiconductor chip. The first semiconductor chip includes a first substrate, a first passivation layer disposed on the first substrate. The first passivation layer includes a first recess region. A first pad covers a bottom surface and sidewalls of the first recess region. The at least one second semiconductor chip includes a second substrate, a second passivation layer disposed adjacent to the first substrate, a conductive bump protruding outside the second passivation layer towards the first semiconductor chip and an inter-metal compound pattern disposed in direct contact with both the conductive bump and the first pad. The underfill layer is in direct contact with both the conductive bump and the inter-metal compound pattern.

Semiconductor package and method of manufacturing the same

An integrated circuit device includes a semiconductor substrate, first through-silicon-via (TSV) structures penetrating a first region of the semiconductor substrate and spaced apart from each other by a first pitch, a first individual device between the first TSV structures and spaced apart from the first TSV structures by a distance that is greater than a first keep-off distance, and second TSV structures penetrating a second region of the semiconductor substrate and spaced apart from each other by a second pitch that is less than the first pitch. The second region of the semiconductor device does not include an individual device that is homogeneous with the first individual device and between the second TSV structures.

Integrated circuit device and semiconductor package including the same

A chip-stacked semiconductor package includes a first chip including a first detection pad and a second detection pad; a second chip provided on the first chip, the second chip including a third detection pad facing the first detection pad and a fourth detection pad facing the second detection pad; and a first medium provided between the first detection pad and the third detection pad to connect the first detection pad to the third detection pad through the first medium, and a second medium, different from the first medium, provided between the second detection pad and the fourth detection pad to connect the second detection pad to the fourth detection pad through the second medium.

Chip-stacked semiconductor package and method of manufacturing same

Disclosed is a semiconductor package comprising a redistribution substrate, a semiconductor chip on the redistribution substrate and including a chip pad electrically connected to the redistribution substrate, and a conductive terminal on the redistribution substrate. The redistribution substrate includes a first dielectric layer, a first redistribution pattern, a second dielectric layer, a second redistribution pattern, and a first insulative pattern. The first redistribution pattern electrically connects the chip pad and the second redistribution pattern. The first insulative pattern has a first surface in contact with the first redistribution pattern and a second surface in contact with the second redistribution pattern. The second surface is opposite to the first surface. A width at the first surface of the first insulative pattern is the same as or greater than a width at the second surface of the first insulative pattern.

A semiconductor package includes a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a first semiconductor structure and a second semiconductor structure that are on the first semiconductor chip and spaced apart from each other across the second semiconductor chip, and a resin-containing member between the second semiconductor chip and the first semiconductor structure and between the second semiconductor chip and the second semiconductor structure. The semiconductor package may be fabricated at a wafer level.

Semiconductor package and method of fabricating the same

An image sensor package comprises: an image sensor chip configured to convert light collected from an outside thereof into an electrical signal; a package substrate disposed under the image sensor chip the package substrate configured to process the electrical signal converted from the image sensor chip; a glass substrate disposed over the image sensor chip while being spaced apart from the image sensor chip; a seal pattern disposed between an upper surface of the package substrate and a lower surface of the glass substrate while surrounding the image sensor chip; and a protection pattern disposed on the package substrate outside the seal pattern, the protection pattern comprising a single-component material, wherein the seal pattern comprises a material different from the material of the protection pattern.

Image sensor package with underfill and image sensor module including the same

A semiconductor package includes a semiconductor device having a through silicon via, a lower redistribution structure on the semiconductor device, the lower redistribution structure including a lower redistribution insulating layer and a lower redistribution pattern electrically connected to the through silicon via, a package connection terminal on the lower redistribution structure and electrically connected to the lower redistribution pattern, an upper redistribution structure on the semiconductor device and including an upper redistribution insulating layer and an upper redistribution pattern electrically connected to the through silicon via, a conductive via in contact with the upper redistribution pattern and on the upper redistribution insulating layer, a connection pad on the conductive via, and a passive element pattern on the upper redistribution structure and electrically connected to the conductive via.

Semiconductor packages

A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a top surface, on which has been formed a color filter and a micro-lens, and a bottom surface opposite to the top surface, forming a redistribution line on the bottom surface of the semiconductor substrate, and forming on the bottom surface of the semiconductor substrate a passivation layer covering the redistribution line. After the redistribution line and passivation layer are formed, an oxide layer between the redistribution line and the passivation is formed at a temperature that avoids thermal damage to the color filter and the micro-lens.

Methods of forming redistribution lines and methods of manufacturing semiconductor devices using the same

A semiconductor package may include a base layer, and a redistribution layer on the base layer. The semiconductor package may include a first pattern, a second pattern, and a passivation layer covering the first and second patterns. The semiconductor package may include a semiconductor chip on the base layer, a first connection terminal between the base layer and the semiconductor chip and coupled to one of chip pads of the semiconductor chip, and a mold layer between the base layer and the semiconductor chip. The first connection terminal may extend into the passivation layer and may be coupled to the first pattern. The second pattern may be electrically insulated from the semiconductor chip.

Growing community of inventors

Suwon-si, South Korea

Seunghoon Yeon