Electronics and Telecommunications Research Institute

University-Industry Cooperation Group of Kyung Hee University

Konkuk University Industrial Cooperation Corp

Seungeon Moon

Jaewoo Lee

Jong Pil Im

Jeong Hun Kim

Solyee Im

Seung Min Lee

Junsoo Kim

Seung Youl Kang

Bae Ho Park

Chansoo Yoon

Jiyong Woo

Jungyun Kwon

Young Tae Kim

Sang Seok Lee

Seongdeok Ahn

Su Jae Lee

Nak Jin Choi

Min Hwan Kwak

Hyung-Kun Lee

Sung-Min Yoon

Han Cheol Ryu

Yeriaron Kim

Jong Jin Jung

Do Joon Yoo

Ji Hoon Jeon

Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm.

Gas sensor and manufacturing method thereof

A neuron circuit and an operating method thereof are disclosed. The neuron circuit may include an input unit to which an input pulse is applied, a bipolar memristor configured to have one end connected to one end of the input unit, a first capacitor configured to be connected between the one end of the bipolar memristor and a ground, a first diode configured to have an anode connected to the one end of the bipolar component, a second capacitor configured to have one end connected to a cathode of the first diode, a first switch configured to be connected between the one end of the second capacitor and the ground, and a second switch configured to be connected between the anode of the first diode and the other end of the second capacitor.

Neuron circuit and operating method thereof

Disclosed are a wireless device capable of being self-powered and an operating method thereof. The wireless device includes an energy harvesting module that generates electrical energy based on energy supplied from an outside, a power management module that generates a voltage based on the electrical energy provided from the energy harvesting module, a user input interface that includes at least one input device sensing an input of a user, and a communication module that transfers a command corresponding to the at least one input device to the outside based on the voltage provided from the power management module, in response to that the at least one input device is accessed by the user.

Wireless device including thermoelectric and photoelectric energy harvesting elements and operating method thereof

The present disclosure relates to a memory device, and more particularly, to a memory device including a substrate, a plurality of vertical structures disposed on the substrate and including insulation layers and lower electrodes, which are alternately laminated with each other, wherein the vertical structures are aligned in a first direction parallel to a top surface of the substrate and a second direction crossing the first direction, an upper electrode disposed on a top surface and side surfaces of each of the vertical structures, and a first dielectric layer disposed between the upper electrode and the vertical structures to cover the top surface and the side surfaces of each of the vertical structures. Here, the first dielectric layer includes a ferroelectric material.

Memory device and method of manufacturing the same

Disclosed is a system for tracking a maximum power point. The system includes an energy harvesting device, a power management integrated circuit including a switching circuit that adjusts an input voltage that is transmitted from the energy harvesting device and a conversion circuit that converts the input voltage adjusted by the switching circuit to output an output voltage, and a measuring device that calculates a ratio of a second power based on the input voltage to a first power based on an open circuit voltage of the energy harvesting device, using an internal impedance of the energy harvesting device and an input impedance of the power management integrated circuit.

System and method of measuring maximum power point tracking efficiency

The present disclosure herein relates to a device for measuring a thermoelectric performance. The device for measuring a thermoelectric performance of a thermoelectric material, which includes a support module configured to generate temperature difference between both ends of the thermoelectric material, a fixing module detachably coupled to the support module to support the thermoelectric material, a temperature measuring unit electrically connected to the fixing module to measure temperature of each of the both ends of the thermoelectric material, and an electromotive force measuring unit electrically connected to the fixing module to measure thermoelectromotive force generated between the both ends of the thermoelectric material. Here, the fixing module includes a first heat sink part and a second heat sink part, which respectively support the both ends of the thermoelectric material.

Device for measuring thermoelectric performance

Provided is a cooling device including a valve structure including a temperature-responsive material that changes in volume in response to changes in temperature, a supporting structure, which is joined to the valve structure and supports the valve structure, and a solvent which contacts the valve structure, wherein a portion of the solvent contacts the valve structure and another portion of the solvent is externally exposed, the valve structure changes in volume in response to changes in temperature and thereby regulating the externally exposed surface area of the solvent.

Cooling device

Provided is a thermoelectric element. The thermoelectric element includes an insulation substrate, a semiconductor layer on the insulation substrate, insulation layers disposed on the semiconductor layer and spaced apart from each other in a first direction parallel with a surface of the insulation substrate, metal thin films disposed on the insulation layers, and metal-semiconductor compound layers between the semiconductor layer and the second parts. Each of the metal thin films includes a first part overlapping the insulation layer and a second part extending from the first part in the first direction or in a direction opposite to the first direction to be connected to the semiconductor layer, and the second parts facing each other in the metal thin films adjacent to each other are spaced apart from each other.

Thermoelectric element and thermoelectric module

A tactile display device comprises a first electrode, a second electrode, supports between a first and a second electrodes, and an electroactive polymer filled between a supports.

Tactile display device

Provided are a dual-side micro gas sensor and a method of fabricating the same. The sensor may include an elastic layer, a heat-generating resistor layer on the elastic layer, an interlayered insulating layer on the heat-generating resistor layer, an upper sensing layer on the interlayered insulating layer, and a lower sensing layer provided below the elastic layer to face the heat-generating resistor layer, thereby reducing heat loss of the heat-generating resistor layer.

Dual-side micro gas sensor and method of fabricating the same

Provided are a distributed analog phase shifter and a method of manufacturing the same, which reduce a change in a characteristic impedance while changing a phase velocity with respect to an applied voltage. In the distributed analog phase shifter, a coplanar waveguide (CPW) is formed in a line form on a substrate. A plurality of ferroelectric capacitors is periodically loaded to the CPW. The ferroelectric capacitors include a ferroelectric film in a pattern form and defines the ferroelectric film affected by the applied voltage within an area of the ferroelectric capacitors. Accordingly, the change in the phase velocity with respect to the applied voltage is maintained without the change of the CPW characteristic and a return loss characteristic and a total insertion loss are improved since a total dielectric loss of the ferroelectric film is decreased.

Growing community of inventors

Daejeon, South Korea

Seungeon Moon