Samsung Electronics Co., Ltd.

Seungeon Ahn

Jaechul Park

Youngsoo Park

Keewon Kwon

Seunghoon Lee

Jungwoo Kim

Myounghoon Jung

Youngjun Yun

Kihwan Kim

Changbum Lee

Changjung Kim

Yongwoo Jeon

Myoungjae Lee

Haeseok Park

Bosoo Kang

Hyuksoon Choi

Seunghyup Lee

Myungjae Lee

Jihoon Ahn

Provided are an image sensor compensating for property degradation of a metal-oxide-semiconductor (MOS) resulting from a threshold voltage shift that may occur when photodiodes and a MOS circuit of configuring an amplifier are integrated on the same substrate, and a method for driving the image sensor.

Image sensor and method for driving image sensor

Example embodiments relate to a lateral type photodiode including a substrate, an insulation mask layer formed on the substrate, and a first type semiconductor layer, an active layer, and a second type semiconductor layer that contact a surface of the insulation mask layer and that are sequentially disposed in a direction substantially parallel to the surface of the insulation mask layer. The insulation mask layer includes a through hole, and the first type semiconductor layer, the active layer, and the second type semiconductor layer are sequentially formed from the through hole by using a lateral overgrowth method.

Lateral type photodiode, image sensor including the same, and method of manufacturing the photodiode and the image sensor

Disclosed is a resistive memory device. In the resistive memory device, at least one variable resistance region and at least one switching device may be horizontally apart from each other, rather than being disposed on the same vertical axis. At least one intermediate electrode, which electrically connects the at least one variable resistance region and the at least one switching device, may be between the at least one variable resistance region and the at least one switching device.

Resistive memory device

A multi-layered memory device is provided. The multi-layered memory device includes two or more memory units and an active circuit unit arranged between each of the two or more memory units. The active circuit includes a decoder. Each memory unit includes one or more memory layers. Each memory layer includes a memory array.

Multi-layered memory devices

Example embodiments provide a method of operating a non-volatile memory in which the non-volatile memory may only be changed from a first state to a second state and may not be changed from the second state to the first state during a programming operation.

Operation method of non-volatile memory

Growing community of inventors

Suwon-si, South Korea

Seungeon Ahn