Samsung Electronics Co., Ltd.

Seungchul Oh

Yongseok Lee

Youngmook Oh

Jeongyun Lee

Wonhyuk Lee

Bosoon Kim

Sangduk Park

Jaeho Jeon

Sunggi Hur

Chankyo Park

A method of manufacturing a semiconductor device is provided. The method includes: forming, on a substrate, dummy gate structures extending in a first direction, spaced apart from one another along a second direction, forming a first oxide layer on the dummy gate structures, etching an upper portion of the first oxide layer and the dummy gate to form a recess region, providing a first nitride layer in the recessed region, forming a second oxide layer on the first nitride layer and the first oxide layer, partially removing upper portions of the first oxide layer and the second oxide layer and providing a second nitride layer on the first and second oxide layers.

Method of manufacturing semiconductor device

A semiconductor device includes a device isolation layer provided on a substrate, the device isolation layer defining first and second sub-active patterns, first and second gate electrodes crossing the first and second sub-active patterns, respectively, and an isolation structure provided on the device isolation layer between the first and second sub-active patterns. The first and second sub-active patterns extend in a first direction and are spaced apart from each other in the first direction. The device isolation layer includes a diffusion break region disposed between the first and second sub-active patterns. The isolation structure covers a top surface of the diffusion break region.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Seungchul Oh