Panjit International Inc.

Seungchul Lee

Youngchul Choi

Chaohsin Huang

Yijyun Ke

A fabrication method of forming a silicon carbide MOSFET is provided. The fabrication method includes the step of providing a semiconductor substrate. A P-well region is formed by implanting the semiconductor substrate through the P-well mask. A spacer is disposed on sidewall of the P-well mask and the P-well region is implanted to form an N-plus layer. A P-plus mask is disposed on the semiconductor substrate and the semiconductor substrate is implanted to form a P-plus layer. A gate oxide layer, a poly gate and a first interlayer dielectric layer are formed on the semiconductor substrate. A second interlayer dielectric layer is disposed on sidewall of the poly gate and the first interlayer dielectric layer. A metal layer is disposed to cover the first interlayer dielectric layer and the second interlayer dielectric layer.

Fabrication method of forming silicon carbide MOSFET

A semiconductor device and a manufacturing method of forming the semiconductor device are provided. The semiconductor device includes an active area and a periphery area surrounding the active area, the semiconductor device includes a semiconductor substrate, an epitaxial layer, a field oxide layer, a polysilicon layer, a dielectric layer and a metal contact layer. The semiconductor substrate has a silicon carbide layer. The epitaxial layer is disposed on the semiconductor layer and the epitaxial layer has a doped layer. The polysilicon layer is disposed on the field oxide layer. The polysilicon layer at the periphery area has a plurality of P-plus regions and a plurality of N-plus regions and the plurality of P-plus regions and the plurality of N-plus regions are alternatively arranged to form a zener diode.

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San Jose, CA, United States of America

Seungchul Lee