Lg Display Co., Ltd.

SeungChan Choi

KiTae Kim

Min-Gu Kang

JunHo Lee

SungBin Ryu

Younghyun Ko

Siu Yoon

Jihye Lee

YoungJang Lee

HyoJin Kim

Jaeman Jang

SoYoung Noh

UiJin Chung

Eunsung Kim

HyunSoo Shin

Wonkyung Kim

JinChae Jeon

Kyeongju Moon

SoYeon Je

Jeanhan Yoon

Bokyoung Cho

Jeihyun Lee

Sungju Choi

A thin film transistor and a display device comprising the same is disclosed. The thin film transistor comprises an active layer on a substrate, and a first gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, and an effective gate voltage applied to a first area of the channel portion, which is in contact with the first connection portion, is greater than that applied to a second area of the channel portion, which is in contact with the second connection portion.

Thin film transistor and display device comprising the same

Embodiments of the present disclosure relate to a display device and a driving method of the display device. More particularly, a subpixel includes a first control transistor for controlling a connection between a body of a driving transistor and a first node of the driving transistor, and a second control transistor for controlling a connection between the body of the driving transistor and a second node of the driving transistor, so that it is possible to improve mobility and on-current performance while increasing a S-factor of the driving transistor.

Display device and driving method of the same

A display device and a driving method for a display device are provided. The display device uses a second storage capacitor and stably moves the threshold voltage of the driving transistor to a positive value in a diode-connected driving circuit. Accordingly, a compensation performance of a threshold voltage of a driving transistor may be improved.

Display device having a driving transistor with two gate electrodes and driving method thereof

Provided is an organic light emitting display. The organic light emitting display can include a gate driving circuit configured to supply a gate signal through each of a plurality of gate lines connected to a display panel, and a luminance control unit between the gate driving circuit and the display panel and electrically connected to the plurality of gate lines and a power supply line. A gate signal is supplied to the pixels in a distributed manner during a plurality of refresh periods. Therefore, it is possible to reduce a luminance decrease in the pixels during the entire refresh period.

Organic light emitting diode display

Provided is an organic light emitting display (OLED) device that can include a timing controller configured to generate control signals to be applied to a plurality of pixels, each pixel including a pixel driving circuit. An adjusted initialization voltage is input to a circuit driving circuit of the OLED device during an initialization period. Thus, a delay of a current flowing in an organic light emitting diode can be improved such that a flicker phenomenon can be suppressed or minimized.

Organic light emitting display device and driving method of the same

A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.

Thin film transistor substrate and display using the same

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Paju-si, South Korea

SeungChan Choi