Samsung Electronics Co., Ltd.

Seungbo Shim

Dougyong Sung

Dongil Son

Junghoon Park

Donghyeon Na

Myungsun Choi

Minyoung Hur

Sungyeol Kim

Sungyong Lim

Namkyun Kim

Hoyong Park

Junghyun Cho

Sangki Nam

Nam Kyun Kim

Namjun Kang

Hyeongmo Kang

Jihwan Kim

Jungmin Ko

Seunggoo Kang

Daehee Park

Yongwoo Lee

Minjae Lee

Junhee Han

Yonghee Kim

Byeongsang Kim

Jaehoon Song

Youngjin Noh

Yongjin Woo

Junghyung Kim

Myungkyoon Chung

Hankon Kim

Dongseok Han

Junkyu Park

Byungjo Kim

Naohiko Okunishi

Byunghun Han

Kwonsang Seo

Duhoon Jung

Hyosin Kim

Hadong Jin

Younghyun Jo

Juho Lee

Sungjin Kim

Hyunseok Kim

Kyungmin Lee

Minsung Kim

Sungil Cho

Yongwon Cho

Jeonggyu Jo

Youngdo Kim

Hoyeong Lim

Jaesung Kim

Jaehak Lee

Hyun Bae Kim

Dowon Kim

Yongseung Yi

Jinseok Lee

Kuihyun Yoon

Yunhwan Kim

Chansoo Kang

Jin Young Bang

SungGeun Kang

Younggirl Yun

Minjoon Kim

Moonki Yeo

Hyungjung Yong

Hyunbae Kim

Jinyoung Bang

Jaeyeon Ra

Younghwan Choi

Kyuho Kim

Kyung-sun Kim

Chungho Cho

Jaejoong Lee

Daeun Son

Jaebin Kim

Bongju Lee

Deokjin Kwon

Tae-sun Shin

Sungjun Ann

Inseok Seo

Yoonbum Nam

Hongseung Cho

Myungsub Ko

Chunyoon Park

Kyungsun Kim

Jongbeom Moon

Dongyub Kim

Siyoung Koh

Seockkeun Han

A plasma processing apparatus includes a wafer support fixture in the chamber and configured to support a wafer, an upper electrode in the chamber and spaced apart from the wafter support fixture, a magnet assembly configured to apply a magnetic field into a chamber, the magnet assembly including a plurality of first magnets and a plurality of second magnets arranged in an annular shape, and a horizontal distance from a central axis of the chamber to each of the plurality of first magnets and each of the plurality of second magnets is less than a radius of the wafer.

Plasma processing apparatus

An electronic device is provided. The electronic device includes a first housing, a second housing movable with respect to the first housing, a motor for moving the second housing to be inserted and/or withdrawn with respect to the first housing, a display for displaying a display area having a size changeable according to the movement of the second housing, and a processor operatively connected to the display and the motor and being configured to identify whether a maintenance mode in which the size of the display area is maintained in a determined size is activated, control the motor to move the second housing according to the state of the electronic device corresponding to the deactivation of the maintenance mode, and maintain the size of the display area to be the determined size corresponding to the activation of the maintenance mode.

Electronic device including flexible display and method for operating electronic device

An apparatus for providing radio frequency (RF) power includes a load having a process chamber, a RF power generator configured to provide the RF power through a cable electrically connected to the load, and a reflected power controller configured to detect reflected power from the load in a delivery mode and configured to control the RF power according to the reflected power that was detected.

Apparatus for providing RF power and operating method thereof

An electronic device may include: a first camera module that captures a first image at a first angle of view; a second camera module that captures a second image at a second angle of view different from the first angle of view; and a processor configured to activate the second camera module in response to a case in which at least one of objects detected in the first image deviates from the first angle of view.

Electronic device and method for capturing image by using angle of view of camera module

A substrate treatment apparatus may include a chucking stage supporting a substrate, a sinusoidal generator supplying a sinusoidal wave to the chucking stage, a non-sinusoidal generator supplying a non-sinusoidal wave to the chucking stage, and a mixer between each of the sinusoidal and non-sinusoidal generators and the chucking stage. The chucking stage may include a chuck body and a plasma electrode in the chuck body. The mixer may include a high pass filter between the sinusoidal generator and the plasma electrode, a low pass filter between the non-sinusoidal generator and the plasma electrode, and a band stop filter between the low pass filter and the plasma electrode.

Substrate treatment apparatus and semiconductor device manufacturing method using the same

A radio frequency (RF) generating device for generating RF output signals is provided. The RF generating device includes: a controller configured to generate an RF control signal and a gain control signal; a plurality of RF signal generators, each RF signal generator being configured to generate an RF signal having at least one of a frequency and a phase determined based on the RF control signal; a plurality of RF amplification modules, each RF amplification module being configured to receive the RF signal generated by a corresponding RF signal generator and generate an RF amplification signal by controlling a gain of the RF signal based on the gain control signal; an RF switch module configured to select at least one of the RF amplification signals generated by the RF amplification modules and generate an RF output signal in a form of a multi-level pulse based on the selected at least one of the RF amplification signals; and an impedance converter connected to an electrode of an external load and configured to convert a load impedance into a target impedance having a target range, the load impedance being an impedance of the external load.

RF generating device and semiconductor manufacturing apparatus including the same

A high voltage power supply apparatus includes a high voltage direct current voltage source, a power switch configured to apply an output of the high voltage direct current voltage source to process equipment, and a sensing circuit unit including a sensor unit including a sensor and at least one operational amplifier, a reference voltage detection unit connected to a node between the sensor and the at least one operational amplifier, and a digital signal processing unit, wherein the sensing circuit unit is connected to an output terminal through which an output of the high voltage direct current voltage source is applied to the process equipment.

High voltage power supply apparatus and plasma etching equipment having the same

Provided are a hybrid matcher capable of precisely performing impedance matching at a high speed when RF power is applied with a multi-level pulse in a facility using RF plasma, and an RF matching system including the hybrid matcher. The hybrid matcher includes a matching circuit in which a plurality of variable element-switch sets are connected to each other in parallel, the variable element-switch sets each including a variable impedance element and a switch connected to the variable impedance element in series and electrically operating therewith, a sensor disposed at a front stage of the matching circuit and configured to measure a current and a voltage of radio frequency (RF) power applied from an RF generator, a variable element driver configured to drive the variable impedance element, a switch driver configured to drive the switch, and a controller configured to control the variable element driver and the switch driver.

Hybrid matcher and radio frequency matching system including the hybrid matcher

An electronic device is provided. The electronic device comprising a flexible display includes a first area and a second area extending from the first area, a motor module configured to move at least a part of the second area according to a driving state in the first state and the second state, and a processor electrically connected to the flexible display and the motor module. The processor identifies a characteristic value related to the motor module when being changed from the first state to the second state and controls the motor module such that an area exposed to the outside of the electronic device among the second area is changed based on the identified characteristic value.

Method for controlling flexible display and electronic device supporting the same

An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

Method of measuring parameters of plasma, apparatus for measuring parameters of plasma, plasma processing system, and method of processing wafer

An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

Impedance measurement jig and method of controlling a substrate-processing apparatus using the jig

An electronic device includes: a first printed circuit board (PCB) including a first plate and a first hole formed in the first plate, a second PCB including a second plate, an interposer including a third plate positioned between the first plate and the second plate, a plurality of first vias connecting the first plate and the third plate, a plurality of second vias connecting the second plate and the third plate, and a first reinforcement portion positioned in the first hole to bond the first plate and the third plate.

Electronic device including stacked printed circuit boards

An electronic device is provided. The electronic device includes a housing, a first printed circuit board disposed in the inner space of the housing, a second printed circuit board disposed so as to overlap at least a portion of the first printed circuit board, when the first printed circuit board is viewed from above, a first interposer disposed between the first printed circuit board and the second printed circuit board, and electrically connecting the first printed circuit board and the second printed circuit board, and at least one second interposer which is disposed between the first printed circuit board and the second printed circuit board so as to be spaced apart from the first interposer when the first printed circuit board is viewed from above, and which electrically connects the first printed circuit board and the second printed circuit board.

Electronic device comprising interposer

A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

Plasma etching method and semiconductor device fabrication method including the same

A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

Apparatus and method fabricating semiconductor device

Growing community of inventors

Seoul, South Korea

Seungbo Shim