Skhynix Inc.

Seung Yun Lee

Myoung Sub Kim

Hae Chan Park

Se Ho Lee

Tae Yong Lee

Beom Seok Lee

Hwan Jun Zang

Ji Sun Han

Byung Jick Cho

Jung Won Seo

Sung Bin Hong

A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Electronic device and method for manufacturing electronic device

The present technology provides an electronic device, a memory device, and a method of operating a memory device. The memory device includes a memory cell array including a variable resistance memory cell coupled to a first conductive line and a second conductive line, and a peripheral circuit configured to provide a write pulse or a read pulse to the variable resistance memory cell through the first conductive line. The write pulse is controlled to have one of a first polarity and a second polarity that are opposite to each other. The read pulse is controlled to have a polarity corresponding to a greater value of first and second amorphization start current values of the variable resistance memory cell, the first amorphization start current value being determined by a first pulse having the first polarity, the second amorphization start current value being determined by a second pulse having the second polarity.

Electronic device, memory device, and method of operating memory device

A resistive memory device includes a memory cell array including a unit memory cell coupled between a word line and a bit line, wherein the unit memory cell includes a data storage material and a non-silicon-substrate-based type bidirectional access device coupled in series, a path setting circuit coupled between the bit line and the word line, suitable for providing a program pulse toward the bit line or the word line based on a path control signal, a forward write command, and a reverse write command, and a control unit suitable for providing a write path control signal, a forward program command, and a reverse program command based on an external command signal.

Resistive memory device and operation method thereof

A semiconductor memory apparatus and a temperature control method thereof are provided. The semiconductor memory apparatus includes a temperature adjustment unit suitable for adjusting a temperature of a memory cell, and a temperature control unit suitable for sensing a temperature of the temperature adjustment unit, comparing a sensed temperature with a reference temperature range, and controlling the temperature adjustment unit to adjust the temperature thereof within the reference temperature range based on a comparison result.

Semiconductor system including semiconductor memory apparatus and temperature control method thereof

Semiconductor memory apparatus and temperature control method thereof

A resistive memory device capable of preventing disturbance is provided. The resistive memory device includes a lower electrode formed on a semiconductor substrate, a variable resistor disposed on the lower electrode, an upper electrode disposed on the variable resistor, and an interlayer insulating layer configured to insulate the variable resistor. The interlayer insulating layer may include an air-gap area in at least a portion thereof.

Growing community of inventors

Gyeonggi-do, South Korea

Seung Yun Lee