Electronics and Telecommunications Research Institute

Seung Yun Lee

Byoung Gon Yu

Young Sam Park

Sung Min Yoon

Jin Yeong Kang

Nam Yeal Lee

Soon Won Jung

Kyu Jeong Choi

Kyoung Ik Cho

Jong Hong Jeon

Sung Han Kim

Min Kyo In

Sang Ouk Ryu

Kangchan Lee

Kang Chan Lee

Joon Suk Lee

Sang Hun Kim

Sang Hoon Cheon

Kyu Hwan Shim

Jong Youl Park

Sangouk Ryu

Won Suk Lee

Hyun Cheol Bae

Suwook Ha

Soonwon Jung

Jin Yeoung Kang

Hong Seung Kim

Provided are a method and an apparatus for optimizing cloud storage services. A method of optimizing cloud storage services includes registering a plurality of cloud storage services; acquiring information associated with the plurality of cloud storage services; performing optimization based on the acquired information; and generating a virtual storage that combines the plurality of cloud storage services through the optimization.

Method and system for optimizing cloud storage services

There is provided a method for providing ubiquitous web services including receiving, at a ubiquitous web service gateway, a request for web service from a web service requester, and sending, at the ubiquitous web service gateway, the request for web service to a web service provider dynamically selected from among web service providers that provide the requested web service, depending on a change in interface information of the web service providers. The method further includes receiving, at the ubiquitous web service gateway, the result of requested web service from the web service provider that received the request for web service, and providing, at the ubiquitous web service gateway, the web service result to the web service requester.

Ubiquitous web service gateway and method

The device for executing a hybrid web application written in a web standard language including a system API call includes a web user interface layer that requests a process according to the system API call from a hybrid web application interface layer, and performs a process according to the web standard language, a hybrid web application interface layer that requests the process corresponding to the system API call from a cross platform system service interface layer in response to the request of the web user interface layer, receives a result of the process corresponding to the system API call from the cross platform system service interface layer, and transmits the received result to the web user interface layer, and a cross platform system service interface layer that performs a platform dependent operation corresponding to the system API based on the request of the hybrid web application interface layer.

Method for executing hybrid web application and apparatus therefor

Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbSephase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbSein the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

Phase-change memory device using Sb-Se metal alloy and method of fabricating the same

Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.

Non-volatile programmable device including phase change layer and fabricating method thereof

A cloud computing system is disclosed. The cloud computing system includes a management server that manages a plurality of servers and distributes service resources. Each of the servers corresponds to one of a secure server type and a general server type, and the secure server type of server decrypts an encrypted code provided from a client. Accordingly, a secure server can execute a code requiring security. Especially, by classifying a program code as a general code or a secret code, the general server can also perform the partial function of a program.

Cloud computing system and cloud server managing method thereof

A system and method for providing a device profile using a device identifier are disclosed. The system for providing a device profile using a device identifier includes: a mobile terminal that provides a device identifier having information regarding a hierarchical structure of a server and a model name; a plurality of servers that analyze the device identifier to recognize the lowermost server when the device identifier is queried, acquire a device profile corresponding to the device identifier through the lowermost server, and provide the acquired device profile; and an application server that connects to one of the plurality of servers, queries the device identifier, and is provided with a device profile corresponding to the device identifier. Device description of various mobile terminals can be more effectively managed and used in a mobile environment.

System and method for providing device file using device identifier

Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.

Method for fabricating phase change memory device using solid state reaction

A nonvolatile programmable switch device using a phase-change memory device and a method of manufacturing the same are provided. The switch device includes a substrate, a first metal electrode layer disposed on the substrate and including a plurality of terminals, a phase-change material layer disposed on the substrate and having a self-heating channel structure, the phase-change material layer having a plurality of introduction regions electrically contacting the terminals of the first metal electrode layer and a channel region interposed between the introduction regions, an insulating layer disposed on the first metal electrode layer and the phase-change material layer, a via hole disposed on the first metal electrode layer, and a second metal electrode layer disposed to fill the via hole. The switch device performs memory operations using resistive heating of a phase-change material without an additional heater electrode, thereby minimizing thermal loss due to thermal conductivity of a metal electrode to reduce power consumption of the switch device.

Nonvolatile programmable switch device using phase-change memory device and method of manufacturing the same

A method for managing profile information of a mobile terminal in a mobile communications system includes: registering profile information of the mobile terminal at a central system via a local system, the profile information having dynamic profile information and static profile information; and registering DB (database) information of an external local system using a same profile format as that used in the central system to thereby manage the dynamic profile information and the static profile information of the mobile terminal. The method further includes registering DB information of another external local system using a profile format different from that used in the central system to thereby manage the dynamic profile information and the static profile information of the mobile terminal.

Method and apparatus for managing profile information of mobile terminal in mobile communications system

Electrical device using phase change material, phase change memory device using solid state reaction and method for fabricating the same

A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based GeSbTe(0.12&#x2266;x&#x2266;0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.

Phase change memory device and method of fabricating the same

Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.

NMOS device, PMOS device, and SiGe HBT device formed on SOI substrate and method of fabricating the same

A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer. The main operating region functioning as a memory operating region is formed of a GeSbTephase-change material to ensure the stability of a memory operation, and simultaneously, the subsidiary regions formed of a GeSbTephase-change material are disposed respectively on and under the GeSbTemain operating region to prevent leakage of thermal energy through an electrode, thereby reducing power consumption.

Growing community of inventors

Daejeon, South Korea

Seung Yun Lee