Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Seung-yoon Lee

Chan-sam Chang

Doo-gyu Lee

Byeong-hwa Ahn

Young-min Yoon

Se-Hyun Lyu

Kyu-Ho Park

Sung-Won Chung

Moo-song Lee

Extreme ultraviolet (EUV) exposure apparatuses and methods, and methods of manufacturing a semiconductor device by using the exposure method, which minimize an error caused by a mirror in an EUV exposure process to improve an overlay error, are provided. The EUV exposure apparatus includes an EUV source configured to generate and output EUV, first illumination optics configured to transfer the EUV to an EUV mask, projection optics configured to project the EUV, reflected from the EUV mask, onto an exposure target, a laser source configured to generate and output a laser beam for heating, and second illumination optics configured to irradiate the laser beam onto at least one mirror included in the projection optics.

Extreme ultraviolet exposure apparatus and method, and method of manufacturing semiconductor device by using the exposure method

Multiple model functions may be calculated by detecting alignment marks on a semiconductor wafer structure. The model functions may be combined to determine a combined model function by using a weight function that assigns a different weight to each of basis functions of the model functions. Thus, even when asymmetry of alignment marks or overlay marks has high dependency on a horizontal location on a wafer, reliability of exposure process is insured.

Method of exposing a semiconductor structure, apparatus for controlling a lithography process performed by a lithography apparatus across a semiconductor structure, non-transitory computer readable medium having instructions stored thereon for generating a weight function

A photomask, including a photomask substrate, a reflective layer on a front surface of a first region of the photomask substrate, the reflective layer being configured to reflect an EUV light, an absorbing pattern on the reflective layer, the absorbing pattern being configured to absorb the EUV light, and an opaque pattern directly on a front surface of a second region of the photomask substrate, the opaque pattern being configured to block a DUV light.

Photomask having patterns for EUV light and DUV light

A mixed-mode semiconductor memory includes a memory bank array, an analog/digital converter, a digital/analog converter, a plurality of digital buses and a control unit. The memory bank array includes a plurality of memory banks that are each composed of a plurality of pieces of single port memory. The analog/digital converter converts an input analog signal into digital information to store data corresponding to the input analog signal in the memory of the memory bank. The digital/analog converter converts a designated memory address of the memory bank into an analog signal to output the memory address in analog signal output form. The plurality of digital buses transmits the address and the digital information. The control unit sets the analog/digital converter and the digital/analog converter to store and output the digital information and the analog information and supplying an address signal to the memory bank. The mixed-mode semiconductor memory can store analog and digital information at a same address and output stored information in analog or digital form, as desired.

Mixed-mode semiconductor memory

A voltage supply device for developing devices of a color image forming apparatus has a printed circuit board (PCB) connected with a high voltage supply source, a plurality of fixed contact point terminals provided at one end of the respective color developing devices, and a plurality of voltage changeover units for selectively connecting the PCB and the fixed contact point terminals to selectively supply the voltage from the high voltage supply source to the respective color developing devices. With the voltage supply device, contact point changeover is enabled without having to move the developing device, by using a relay part of a relatively simple structure during the change of developing device. Accordingly, deterioration of printing quality due to shock from the contact with the developing device is avoided, and the reliability of high voltage contact point changeover is improved. Further, the number of high voltage wiring harness, which is required for supplying voltage from the high voltage supply source to the developing devices, can be reduced.

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Seoul, South Korea

Seung-yoon Lee