Skhynix Inc.

Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Seung Wook Ryu

Ki Hong Lee

Wan Sup Shin

Kyung-Hoon Lee

Byeong Wook Park

Yeon-kyoung Jung

Eui Sung Kim

Jong Gi Kim

Doo Yong Oh

Kyoung Ryul Yoon

Sung Hun Son

Heung Ju Lee

Jun Seok Oh

A semiconductor memory device includes a first source layer, a second source layer on the first source layer, a stack structure over the second source layer, and a common source line penetrating the stack structure. The second source layer includes a protective layer in contact with the common source line and a conductive layer surrounding the protective layer.

Semiconductor memory device and manufacturing method thereof

A method for fabricating a vertical semiconductor device may include forming a lower-level stack including a source sacrificial layer over a semiconductor substrate; forming an upper-level stack including dielectric layers and sacrificial layers over the lower-level stack; forming a vertical channel structure including a channel layer that penetrates the upper-level stack and the lower-level stack; forming a slit that penetrates the upper-level stack while exposing the source sacrificial layer; forming a lateral recess that extends from the slit by removing the source sacrificial layer; forming a first contact layer which is coupled to a portion of the channel layer while filling the lateral recess; selectively forming a second contact layer over an exposed surface of the first contact layer; and selectively forming a chemical barrier layer over the second contact layer.

Vertical semiconductor device and method for fabricating the same

A semiconductor memory device includes: a conductive line stack including a plurality of first conductive lines that are stacked over a substrate in a direction perpendicular to a surface of the substrate; conductive pads extending laterally from edge portions of the first conductive lines, respectively; and contact plugs coupled to the conductive pads, respectively.

Semiconductor memory device

According to the disclosure, highly integrated memory cells and a semiconductor device having the same are provided. According to an embodiment, a semiconductor device comprises a plurality of memory cells vertically stacked on a base substrate, each of the plurality of memory cells includes, a bit line vertically oriented from the base substrate, a capacitor horizontally spaced apart from the bit line, an active layer horizontally oriented between the bit line and the capacitor, a word line positioned on at least one of a top surface and bottom surface of the active layer and horizontally extending in a direction crossing the active layer, and a capping layer positioned between the word line and the bit line and including, at least, a low-k material and an air gap.

Three-dimensional semiconductor device with air gap

A memory device including a substrate; a bit line laterally oriented to be parallel to the substrate; a transistor including two channels that are laterally oriented from the bit line and a word line that is vertically oriented and surrounds the two channels; and a capacitor laterally oriented from the transistor.

Memory cell and memory device with the same

In a method of manufacturing a semiconductor device, the method includes: forming a stack structure; forming a channel layer penetrating the stack structure; forming a first dielectric layer in the channel layer; forming a second dielectric layer in the first dielectric layer; forming an opening by selectively etching the first dielectric layer; selectively etching the second dielectric layer exposed through the opening; and forming a pad in the opening.

Semiconductor device and manufacturing method thereof

A heater unit is provided, the heater unit equipped with an induction heating coil and an electric heater selectively operated based on kind and state of a load of a cooking vessel placed on the heater unit. The kind is determined by an input current inputted when a load-type determination unit causes the induction heating coil to be operated and a resonance current flowing into the induction heating coil. The state is determined by a temperature change of the heater unit when a load-state determination unit allows the electric heater to generate heat, and the induction heating coil and the electric heater are selectively operated based on the determined kind and state of the load. Accordingly, a user needs not to scrupulously determine the kind of the cooking vessel and the electric cooker is not operated under a no-load state to prevent occurrence of safety accidents.

Apparatus and method for sensing load of electric cooker

The present invention relates to an antibacterial colorant and a composition that includes the antibacterial colorant. The antibacterial colorant has at least one functional group and at least one antibacterial moiety bound thereto by an ester bond or an amide bond.

Growing community of inventors

Gyeonggi-do, South Korea

Seung Wook Ryu