Eugene Technology Co., Ltd.

Seung-Woo Shin

Sung-Kil Cho

Woo-Duck Jung

Ho-Min Choi

Wan-Suk Oh

Koon-Woo Lee

Seong Jin Park

Cha-Young Yoo

Hai-Won Kim

Woo Duck Jung

Wan Suk Oh

Ho Min Choi

Hyuk-Lyong Gwon

Ki Ho Kim

Ki-Ho Kim

Koon Woo Lee

Hyuk Lyong Gwon

Kang-Wook Lee

A method for forming an amorphous thin film comprises: forming a seed layer on a surface of a base by supplying aminosilane-based gas on the base; forming the first boron-doped amorphous thin film by supplying the first source gas including boron-based gas on the seed layer; and forming the second boron-doped amorphous thin film by supplying the second source gas including boron-based gas on the first amorphous thin film.

Method for forming amorphous thin film

Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.

Method for forming polysilicon film

Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH), disilane (SiH), and dichlorosilane (SiClH).

Method and apparatus for depositing amorphous silicon film

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Hwaseong-si, South Korea

Seung-Woo Shin