Hynix Semiconductor Inc.

Stmicroelectronics S.r.l.

Seung Woo Shin

Cha Deok Dong

A method of manufacturing a flash memory device is disclosed. A first oxide layer, a nitride layer, a second oxide layer, and a first polysilicon layer, which is a part of a polysilicon layer for a control gate, are formed to a predetermined thickness on a semiconductor substrate. A first etch process is performed to form gate patterns. An insulating layer is formed on the entire surface. A second etch process is implemented so that insulating layer spacers are formed on both sidewalls of each gate pattern while exposing the first polysilicon layer. A second polysilicon layer for the control gate is formed on the entire surface.

Method of manufacturing flash memory device

Provided is a method of manufacturing a flash memory device. In the method, after forming a cell string and source/drain selection transistors, it forms a first oxide film in which a sidewall oxide film and a buffering oxide film are stacked, a nitride film, and a second oxide film for spacer on the overall structure. Then, source/drain contact holes are formed. Thus, the source/drain selection transistors are prevented from being exposed while etching the source/drain contact holes, which enhances the reliability of the flash memory device.

Method of manufacturing a flash memory device

The present invention relates to a method for forming an oxide film in semiconductor devices. According to the present invention, after an oxide film is formed, interface trap charge and oxide trap charge can be reduced through a high-temperature thermal treatment process and a pre-treatment thermal process. Further, as an oxide film of a high quality whose trap charge is reduced is formed, reliability of a device is improved and variation in the threshold voltage is prevented.

Method for forming oxide film in semiconductor device

A semiconductor device and a method of manufacturing the same, wherein first and second gate electrodes are formed to have a spacer shape. The length of an underlying dielectric film can be automatically controlled. A gate oxide film and a third gate electrode are formed between the first and second gate electrodes. Voids are not generated when burying the third conductive film. A thickness and width of the gate oxide film can be freely controlled.

Semiconductor device and method of manufacturing the same

Disclosed is a method of manufacturing a semiconductor device. A floating gate is formed and a nitrification process is then implemented. With the disclosed process, it is possible to improve the roughness of the top surface of the floating gate electrode. Furthermore, a nitrification process and a dielectric film formation process are implemented in-situ, which simplifies the manufacturing process.

Method of manufacturing a semiconductor device

Disclosed is a method of forming an oxynitride film. The method comprises the steps of loading a silicon substrate into an oxidization furnace, implanting an oxygen based source gas into the oxidization furnace to grow a pure silicon oxide film on the silicon substrate, blocking implantation of the oxygen based source gas and implanting an inert gas to exhaust the oxygen based source gas remaining within the oxidization furnace, raising a temperature within the oxidization furnace to a nitrification process temperature, stabilizing the temperature within the oxidization furnace, implementing a nitrification process for the pure silicon oxide film by implanting a nitrogen based source gas, and stopping implantation of the nitrogen based source gas and rapidly cooling the oxidization furnace while implanting the inert gas into the oxidization furnace.

Growing community of inventors

Icheon-si, South Korea

Seung Woo Shin