Skhynix Inc.

Seung Wan Chai

Young Sub Yuk

Kyoung Han Kwon

There are provided a signal generation circuit and a semiconductor memory device including the same. The signal generation circuit includes: a signal input component configured to generate a first internal output signal and a second internal output signal in response to an input signal, and to adjust potential levels of the first internal output signal and the second internal output signal in response to an output signal; and a signal output component configured to generate the output signal in response to the first internal output signal and the second internal output signal.

Signal generation circuit and semiconductor memory device including the same

A memory device that supports a built-in self-test (BIST) operation includes: a plurality of memory cells; a page buffer group including page buffer circuits respectively coupled to the plurality of memory cells through bit lines; a built-in self-test (BIST) controller configured to generate pattern data to be stored in the page buffer circuits and reference data to be compared with sensed data obtained from the page buffer circuits, and to compare the reference data with the sensed data; and an input/output control circuit configured to input the pattern data to the page buffer circuits and to transfer the sensed data from the page buffer circuits to the BIST controller.

Memory device and operating method thereof

A ring oscillator includes first to fourth current-controlled delay circuits configured to allow a delay time to be changed depending on a magnitude of sink current, wherein the first to fourth current-controlled delay circuits are arranged symmetrically to each other about a square.

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Seoul, South Korea

Seung Wan Chai