Samsung Electronics Co., Ltd.

Skhynix Inc.

Seung Wan Chae

Tae Hun Kim

Sung Tae Kim

Yong Il Kim

Su Yeol Lee

Jong Ho Lee

Seung Jae Lee

Jong Han Kim

Jin Hwan Kim

Jin Hyun Lee

Tae Sung Jang

Bum Joon Kim

Bo Kyung Kim

Jong In Yang

Chan Mook Lim

Jong Rak Sohn

Yung Ho Ryu

Young Ki Kim

Su Hyun Jo

Byung Duck Cho

Hyung Duk Ko

Young Ky Kim

Eun Woo Jo

Jong Il Lee

Yong Duk Cho

Oh Seok Kim

Jae Hawk Lee

Young Yong Lee

Bo Kyoung Kim

A semiconductor memory device includes a memory cell array, a row decoder, a plurality of page buffers, and a voltage switching circuit. The memory cell array includes a plurality of memory cells. The row decoder is connected to the memory cell array through word lines. The plurality of page buffers are connected to the memory cell array through bit lines. The voltage switching circuit decodes an operation voltage and transmits the decoded operation voltage to the row decoder. The plurality of page buffers are formed in a first under cell region among first and second under cell regions, the first and second under cell regions being adjacent to each other in a first direction under the memory cell array. At least a portion of the voltage switching circuit is formed in an under slim region that is adjacent to the first under cell region and the second under cell region in a second direction.

Semiconductor memory device

A voltage switching circuit selectively transfers voltages applied to a first input terminal and a second input terminal to a first output terminal and a second output terminal. The voltage switching circuit includes a first transistor and a second transistor. The first transistor is formed on a first well on a substrate, and is coupled between the first input terminal and the first output terminal. The second transistor is formed on a second well different from the first well, and is coupled to the second input terminal. In a first mode in which a first voltage applied to the first input terminal is transferred to the first output terminal and the second output terminal, the first transistor is turned on and the second transistor is turned off.

Voltage switching circuit and semiconductor memory device having the same

A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.

Semiconductor light emitting device, light emitting module, and illumination apparatus

There is provided a semiconductor light emitting device including: a light transmissive substrate; a light emitting part; first and second electrodes electrically connected to the first and second conductivity type semiconductor layers, respectively; and a rear reflective part including a reflective metallic layer, and a light transmissive dielectric layer interposed between the light transmissive substrate and the reflective metallic layer.

Semiconductor light emitting device including rear reflective part

A data transmission method for a high-speed packet access system includes: sending, by a user equipment, packet data containing scheduling information having size information of a packet buffer through an uplink channel to a base station, and sending quality indicator information and acknowledgement information through another uplink channel to the base station; determining, by the base station, the value of a turbo mode flag by comparing amounts of data stored in the packet buffer of the user equipment and a packet buffer of the base station respectively with preset thresholds; and deactivating, by the user equipment when the turbo mode flag of an order message contained in received control data, packet data reception and control data transmission, and redirecting transmit power of a specified transmitter to a packet data transmitter to increase transmit power of the packet data transmitter for faster packet data upload.

Data transmission apparatus and method for a high-speed packet access system

A light emitting device package includes: an undoped semiconductor substrate having first and second surfaces opposed to each other; first and second conductive vias penetrating the undoped semiconductor substrate; a light emitting device mounted on one region of the first surface; a bi-directional Zener diode formed by doping an impurity on the second surface of the undoped semiconductor substrate and having a Zener breakdown voltage in both directions; and first and second external electrodes formed on the second surface of the undoped semiconductor substrate such that they connect the first and second conductive vias to both ends of the bi-directional Zener diode region, respectively.

Light emitting device package and fabrication method thereof

A semiconductor light emitting device includes: a light emitting diode unit including a light-transmissive substrate having a face sloped upwardly at a lower edge thereof. A rear reflective lamination body is formed on the lower face and the surrounding sloped face of the light-transmissive substrate. The rear reflective lamination body includes an optical auxiliary layer and a metal reflective film formed on a lower face of the optical auxiliary layer. A junction lamination body is provided to a lower face of the rear reflective lamination body. The junction lamination body including a junction metal layer made of a eutectic metal material and a diffusion barrier film.

Semiconductor light emitting diode chip and light emitting device using the same

Growing community of inventors

Gyeonggi-do, South Korea

Seung Wan Chae