Samsung Electronics Co., Ltd.

Seung Sik Kim

Dae Hoon Kim

Jae Hoon Jeon

Ji Yoon Kim

Min Woong Seo

Dong Seok Cho

Ji-Youn Song

KangMook Lim

Young Chan Kim

Ji Won Lee

Eun Sub Shim

Tae Han Kim

Moo Sup Lim

Jae Kyu Lee

Dong Mo Im

Min Seok Oh

Sung Young Seo

Dong Joo Yang

Ji Youn Song

Moo Sup Liim

Kang Mook Lim

Je Yeoun Jung

An image sensor includes: a substrate including a first area and a second area; a plurality of unit pixels disposed in the substrate, wherein each of the plurality of unit pixels includes a photoelectric conversion layer; a pixel defining pattern separating the unit pixels from each other; a surface insulating film disposed on the substrate; a line structure disposed on the substrate, and including a first interline insulating film and a wire pattern disposed in the first interline insulating film; a micro-lens disposed in the first area; and a light-blocking film disposed in the second area. The light-blocking film includes: a horizontal light-blocking film extending along a top surface of the surface insulating film; and a vertical light-blocking film extending through the surface insulating film and the substrate. The vertical light-blocking film is electrically connected to the wire pattern. The light-blocking film is electrically connected to the pixel defining pattern.

Image sensor including a light blocking film

An image sensor includes a plurality of unit pixels, each including: a substrate including first and second sides which are opposite to each other, a photoelectric conversion layer in the substrate, and a wiring structure on the first side of the substrate. The wiring structure may include: a first capacitor, a second capacitor spaced from the first capacitor, a plurality of edge vias arranged along edges of the unit pixel, and a plurality of central vias interposed between the first capacitor and the second capacitor.

Image sensor

A semiconductor device includes a substrate having a first surface and a second surface opposite to the first surface. A device isolation layer which defines a first region, a second region, and a support region in the substrate. The second region has a smaller width than the first region, and the support region is between the first region and the second region. A photoelectric conversion element is in the first region. The support region is continuous with the first region and the second region. The device isolation layer has an integral insulation structure which extends through the substrate from the first surface of the substrate to the second surface of the substrate.

Semiconductor devices including support region and methods of forming the same

A semiconductor device and an image sensor, the semiconductor device including a substrate; a photoelectric conversion device in the substrate; a first floating diffusion region adjacent to the photoelectric conversion device; a transfer transistor connected to the photoelectric conversion device and the first floating diffusion region; a reset transistor connected to the first floating diffusion region; a dual conversion gain (DCG) transistor between the first floating diffusion region and the reset transistor; a second floating diffusion region between the DCG transistor and the reset transistor; and an extension pattern, a first portion of the extension pattern being in contact with the second floating diffusion region.

Semiconductor device including floating diffusion and extension pattern

An image sensor having improved signal-to-noise ratio and reduced random noise and an image processing system are provided. The image sensor includes a pixel array including a pixel connected to a column line and configured to provide an analog pixel signal to the column line in response to at least one row control signal, and an analog-to-digital converter (ADC) that receives and converts the analog pixel signal into a corresponding digital pixel signal. The pixel includes a group of sub-pixels simultaneously selected by the at least one row control signal, such that each one of the sub-pixels in the group of sub-pixels provides a sub-pixel signal, and the analog pixel signal is an average of the sub-pixel signals provided by the group of sub-pixels.

Image sensor having improved signal-to-noise ratio and reduced random noise and image processing system

An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

Image sensor and image processing system including the same

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Hwaseong-si, South Korea

Seung Sik Kim