Beijing Boe Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Chongqing Boe Optoelectronics Technology Co., Ltd.

Seung Moo Rim

Haijun Qiu

Jianfeng Yuan

Zhangtao Wang

Tae Yup Min

Chaoyong Deng

Fan Yang

Xu Chen

Zhenyu Xie

Ming Wang

Xibin Shao

Chunping Long

Liang Sun

Jianshe Xue

Zhonghao Huang

Kui Liang

Yongliang Zhao

Xiaming Zhu

Jigang Zhao

Zheng Liu

Yongzhi Song

Huibin Guo

Zhaohui Hao

Seung Min Lee

Ke Liang

Jiannan Zhang

A thin film transistor includes a substrate, and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode which are on the substrate. The active layer includes a channel region between the source electrode and the drain electrode and the channel region includes an edge region along a channel length direction and a main region outside the edge region. The thin film transistor further includes an auxiliary layer, a projection of the auxiliary layer on the substrate is at least partially overlapped with a projection of the edge region of the channel region on the substrate, and the auxiliary layer is configured to enhance a turn-on voltage of the edge region of the channel region.

Thin film transistor and manufacturing method thereof and electronic device

A detecting system configured for detecting flaws on an object to be detected, increasing: a display processing device; an tunable light source; at least one light transmitter, wherein the tunable light source is connected with the at least one light transmitter; at least one light receiver configured for cooperating with the at least one light transmitter, wherein the at least one light receiver is connected with the display processing device; wherein the display processing device is connected to the tunable light source, receives and processes information provided by the light receiver to form detection images, and is operable to adjust the tunable light source.

Detecting system

A password input device includes: at least two mutually separate touch display screens; a controller configured to control the touch display screen to randomly display characters; and a processor configured to determine the characters currently displayed on corresponding touch display screens subjected to a touch operation after detecting the touch operation, determine a character string inputted by a user according to a sequence of the touch operation, and take the character string as a password inputted by the user. The password input device can adopt a flexible overall arrangement mode of the character string for the password and improve the security of password input. A password input method is further disclosed.

Password input device

A display device and a manufacturing method thereof are disclosed. The display device comprises an upper substrate (), a lower substrate (), a solvent (), and ellipsoids (), and the solvent () and the ellipsoids () are provided between the upper substrate () and the lower substrate (). The ellipsoids are configured for forming photonic crystals and have electromagnetic characteristics. By means of photonic crystals formed by the ellipsoids having a shape of oval spheres with a size in order of nanometer or sub-micrometer, the display device can change wavelength of reflected light and present different colors, thus color images can be displayed.

Display device and method for manufacturing the same

An array substrate comprises a first substrate and a plurality of gate lines and a plurality of the data lines provided on the first substrate, the plurality of gate lines and the plurality of the data lines define a plurality of pixel units arranged into a matrix form. Each of the plurality of pixel units comprising: a first electrode having slits, comprising two or more regions where the slits have the different tilt degrees; a second electrode; and a thin film transistor switch, wherein the first electrode and the second electrode are used to form a horizontal electric field for driving liquid crystal molecules, the gate line and the thin film transistor switch are arranged between each two regions of the first electrode, and the thin film transistor switch is controlled by the gate line to operate each region of the first electrode.

Array substrate, liquid crystal panel and liquid crystal display

The present invention provides an array substrate of LCD display and a manufacturing method thereof, the array substrate comprises a transparent substrate, gate lines and data lines which are disposed on the transparent substrate, wherein the array substrate further comprises: a transparent conducting bar and a gate short-circuit bar which are disposed on the transparent substrate, said transparent conducting bar is disposed below said gate short-circuit bar, said gate short-circuit bar and said data lines are arranged in a same layer. The present invention can avoid the problem of burning the gate short-circuit bar due to the occurrence of static discharge, the electrical defects in the array substrate can be normally detected and repaired in the array test process, thus the qualified product rate of the array substrate of LCD display is improved.

Array substrate of LCD display and a manufacturing method thereof

According to one aspect of the present invention, the provided is an array substrate. Specifically, the first conductive strip that is coupled to the first data shorting bar and the second conductive strip that is coupled to the second data shorting bar are formed on the array substrate. The width of the first conductive strip is greater than the width of the first data shorting bar. The width of the second conductive strip is greater than the width of the second data shorting bar. The first conductive strip is overlapped with the second conductive strip. Such a structure of the array substrate effectively increases the overlapped capacitance between the data metal layer and the gate metal layer.

Array substrate, manufacturing method for the same and display device

A manufacturing method of a light barrier glass sheet, comprising: farming a metal layer () on a glass substrate (); coating a first photoresist layer () on the metal layer (), performing first exposure on the first photoresist layer () through a half tone mask, then performing first development on the first photoresist layer (); removing partial region of the metal layer () through a first etching process; removing a partial thickness and a partial region of the first photoresist layer () through an ashing process; forming an insulating layer () on the exposed glass substrate (), the exposed metal layer (), the first photoresist layer () after the ashing process, and sidewalls of the photoresist layer () after the ashing process; removing the first photoresist layer (), the insulating layer () on the first photoresist layer (), and the insulating layer () on the sidewalls of the first photoresist layer () by a photoresist lifting-off process so as to form a via hole (); forming a transparent pixel electrode pattern () in the via hole (), on sidewalls of the via hole () and on the insulating layer (). With the method, one mask process can be omitted, thus the manufacturing process can be simplified, the production efficiency can be improved and the production cost can be reduced.

Manufacturing method of light barrier glass sheet

A thin film transistor liquid crystal display (TFT-LCD) array substrate comprising a gate line and a data line formed on a base substrate. The gate line and the data line intersect with each other to define a pixel region, in which a pixel electrode and a thin film transistor (TFT) are formed, and a first insulating layer and a second insulating layer are interposed between the gate line and the data line, and the pixel electrode is disposed between the first insulating layer and the second insulating layer. A method of manufacturing a TFT-LCD is also disclosed.

Method of manufacturing TFT-LCD array substrate

A TFT array substrate and a manufacturing method thereof, where the TFT array substrate includes a substrate; a gate line and a gate electrode integrated therewith, which are covered by a gate insulating layer, a semiconductor layer, and a ohmic contact layer sequentially. An insulating layer is formed on the resulting substrate and on both sides of the gate line and the gate electrode, the gate insulating layer, the semiconductor layer, and the ohmic contact layer. A trench is then formed in the ohmic contact layer to divide the ohmic contact layer over the semiconductor layer. A data line and first and second source/drain electrodes are then formed on the insulating layer and the ohmic contact layer.

TFT array substrate and manufacturing method thereof

A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously.

Thin film transistor liquid crystal display array substrate and manufacturing method thereof

A thin film transistor liquid crystal display (TFT-LCD) array substrate and a method for forming the same. The thin film transistor liquid crystal display (TFT-LCD) device, comprising gate lines and data lines that intersecting with each other to define pixel regions, wherein a pixel electrode and a thin film transistor are formed in each of the pixel regions, and wherein the data lines each have a mirror-symmetry structure so that coupling capacitance between one data line and the pixel electrodes in an upper adjacent pixel region and a lower pixel region that are adjacent changes oppositely.

Growing community of inventors

Beijing, China

Seung Moo Rim