Samsung Electronics Co., Ltd.

Seung-Min Ryu

Jung-Ho Lee

Youn-Joung Cho

Jun-Hyun Cho

Jungwoo Choi

Jae-hyoung Choi

Sang Shin Lee

Youn-soo Kim

Jung-Sik Choi

Younjoung Cho

Jung-sik Choi

Kyu-Ho Cho

Gyu-Hee Park

Woo-Jae Kim

Jong-hyun Lee

Kyoo-chul Cho

Kyoo-Chul Cho

Chaeho Kim

Jaebong Lee

Juwan Lim

Hee Jong Jeong

Seung-Soon Jang

Young-Kwon Kim

Ji Su Son

Ji-Ho Uh

Jiyu Choi

A method of manufacturing a semiconductor device includes providing a metal precursor on a substrate, and providing a reactant and a co-reactant to form a metal nitride layer by reaction with the metal precursor, the reactant being a nitrogen source, the co-reactant being an organometallic compound represented by Chemical Formula 1:M2L)  [Chemical Formula 1]In Chemical Formula 1, M2 may be selected from Sn, In, and Ge, n may be 2, 3, or 4, and each Lmay independently be hydrogen, a halogen, or a group represented by Chemical Formula 2. In Chemical Formula 2, x may be 0, 1, 2, 3, 4, or 5 and y may be 0 or 1. When x is 0, y may be 1. R, R, R, and Rmay each independently be hydrogen, an alkyl group having 1 to 5 carbons, or an aminoalkyl group having 1 to 5 carbons.

Method of manufacturing semiconductor device

A gas injector includes first and second gas introduction passages extending in a first direction toward a central axis of a process chamber respectively, a first bypass passage extending from the first gas introduction passage in a second direction that is substantially perpendicular to the first direction, a second bypass passage extending from the second gas introduction passage in a reverse direction to the second direction, a first distribution passage isolated from the first bypass passage in the first direction and extending from an outlet of the first bypass passage in the reverse direction to the second direction, a second distribution passage isolated from the second bypass passage in the first direction and extending from an outlet of the second bypass passage in the second direction, and a plurality of spray holes in an outer surface of the first and second distribution passages and configured to spray the process gas.

Gas injectors and wafer processing apparatuses having the same

An apparatus is provided for depositing a thin film. The apparatus includes a chamber, a susceptor disposed in the chamber and supporting a substrate, a reflection housing disposed outside the chamber, a light source unit disposed in the reflection housing and irradiating light to the susceptor, and a light controlling unit blocking at least a portion of an irradiation path of the light to control an irradiation area of the light on the susceptor. At least a portion of the light controlling unit is disposed in the reflection housing.

Apparatus for depositing a thin film

In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced.

Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor

Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.

Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same

Provided herein are methods of forming a metal oxide layer that include providing an organometallic compound and an oxidizing agent to the substrate to form the metal oxide layer on the substrate. The organometallic compound may have the general formula of M(NRR)R, wherein M is a metal; Rand Rare each independently hydrogen or alkyl; and Ris selected from the group consisting of alkyl, cycloalkyl, heterocycloalkyl, aryl and heteroaryl.

Methods of forming metal oxide layers, methods of forming gate structures using the same, and methods of forming capacitors using the same

A metallic gloss image composition including a hydromorphic solvent and a polsulfurnitride derivative dissolved in the hydromorphic solvent. The polysulfurnitride derivative has the following formula: R1&mdash;(&mdash;S&boxH;N&mdash;) &mdash;R2. Instead of the hydromorphic solvent, a thermoplastic renis formed by polymerization of monomers can be used to obtain the metallic gloss image composition.

Metallic gloss image composition and method for fabricating the same

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Busan, South Korea

Seung-Min Ryu