Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Yonsei University

Ulsan College Industry Cooperation

Seung Mi Seo

Suk Won Jung

Kyung-Sook Jeon

Sung Hoon Yang

Ki-Hun Jeong

Sung-Hoon Yang

Sang-Youn Han

Sang Youn Han

Jung-Suk Bang

Mi-Seon Seo

Jong Seo Lee

Suk-Won Jung

Joon Hak Oh

Kun-Wook Han

Byeong Hoon Cho

Dae Cheol Kim

Woong Kwon Kim

Hyung Jun Kim

Jun Ho Song

Cheol Kyu Kim

Jun-Ho Song

Kap-Soo Yoon

Do Young Kim

Kyung Tea Park

Woong-Kwon Kim

Dae-Cheol Kim

Byeong-Hoon Cho

Ha-Yun Kang

Sun Jo Kim

A display device includes a substrate, a thin film transistor disposed on the substrate, where the thin film transistor includes a drain electrode, a passivation layer disposed on the substrate covering the thin film transistor, a common electrode disposed on the passivation layer, where the common electrode receives a common voltage, a liquid crystal layer disposed in a microcavity layer on the common electrode, a roof layer disposed covering the liquid crystal layer, and a pixel electrode disposed on the roof layer, and a method of manufacturing the display device is provided.

Liquid crystal display and method of manufacturing the same

The present disclosure relates to a display device including a touch sensor and a manufacturing method thereof, and more particularly, to a display device including a touch sensor using a piezoelectric material and a manufacturing method thereof. The display device includes a first substrate, wherein a plurality of thin film transistors are disposed on the first substrate; a second substrate disposed facing the first substrate; a plurality of piezoelectric elements disposed on the second substrate; and a first sensing electrode overlapping the piezoelectric elements, the first sensing electrode being configured to transfer a sensing voltage generated as a result of pressure applied to the piezoelectric elements.

Display device including touch sensor and manufacturing method thereof

A touch sensing display device includes: a thin film transistor array panel including a thin film transistor; and an opposing display panel facing the thin film transistor array panel. The opposing display panel includes a piezoelectric sensor including a capacitive sensor and a piezoelectric layer. The capacitive sensor includes sensing wires, driving wires, and a bridge connecting the sensing wires together or the driving wires together. The piezoelectric sensor further includes a pair of electrodes, the piezoelectric layer being disposed between the pair of electrodes. The bridge and a first electrode of the pair of electrodes are formed of the same material and in the same layer.

Touch sensing display device

A display device includes a display panel which displays an image, a cushion tape member which is disposed below the display panel to protect a rear surface of the display panel, and includes a first cushion tape and a second cushion tape, a sound element which is disposed between the first cushion tape and the second cushion tape, and includes a pair of electrodes and a vibrating material layer disposed between the pair of electrodes.

Display device

A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.

Display device and manufacturing method thereof

A touch sensitive display device utilizing infrared ray sensing transistors. The transistors are configured, and comprise specified materials, to allow them to be formed with fewer photolithography processes, reducing cost and manufacturing time.

A photosensor includes a sensing switching element, a sensing element, and a reset switching element. The sensing switching element includes an output terminal connected to a sensing signal line, a control terminal connected to a first gate line, and an input terminal connected to the first node. The sensing element includes an output terminal connected to a first node, a control terminal connected a second gate line disposed next to the first gate line, and an input terminal connected to a source voltage line transmitting a source voltage. The sensing element senses light. The reset switching element includes an output terminal connected to the first node, a control terminal connected to the second gate line, and an input terminal connected to a driving voltage line transmitting a driving voltage.

Photosensor, display device including the same, and driving method thereof

A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

IR sensing transistor and manufacturing method of display device including the same

The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal.

Visible ray sensor and light sensor including the same

A photosensor includes a substrate, a gate line, and a data line disposed on the substrate. A thin film transistor is connected to the gate line and the data line. A first photo-sensing member is disposed on the substrate, and a first electrode is connected to the thin film transistor and the first photo-sensing member. A second photo-sensing member is disposed on the first photo-sensing member, and a second electrode is connected to the first electrode and the second photo-sensing member.

Photosensor, manufacturing method thereof, and liquid crystal display including a photosensor

A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.

Growing community of inventors

Seoul, South Korea

Seung Mi Seo