Skhynix Inc.

Seung Mi Lee

Eun Jeong Kim

Ji Won Choi

Jong Kook Park

Yun Hyuck Ji

Beom Ho Mun

Kyoung Tak Kim

A semiconductor device includes: a bit line structure formed over a substrate; a storage node contact plug spaced apart from the bit line structure; and a nitride spacer positioned between the bit line structure and the storage node contact plug, wherein the nitride spacer has a higher silicon content in a portion adjacent to the storage node contact plug than in a portion adjacent to the bit line structure.

Semiconductor device and fabrication method of the same

A semiconductor device includes: a semiconductor device, comprising: a bit line structure including a bit line contact plug, a bit line, and a bit line hard mask that are sequentially stacked over a substrate; a storage node contact plug that is spaced apart from the bit line structure; a conformal spacer that is positioned between the bit line and the storage node contact plug and includes a low-k material; and a seed liner that is positioned between the conformal spacer and the bit line and thinner than the conformal spacer.

Semiconductor device with low-k spacer

Growing community of inventors

Gyeonggi-do, South Korea

Seung Mi Lee