Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Seung-Kyu Park

Dong-Hyun Lee

Min-Jae Jeong

Byung-Soo So

Yong-Duck Son

Ki-Yong Lee

Jin-Wook Seo

Byoung-Keon Park

Yun-Mo Chung

Jong-Ryuk Park

Kil-Won Lee

Tak-Young Lee

Jae-Wan Jung

Jong-Moo Huh

Joon-Hoo Choi

Nam-Deog Kim

Joon-Chul Goh

Kwang-chul Jung

Tae-Youn Kim

Yong-Hwan Park

Kyoung-Ju Shin

Beohm-Rock Choi

Sang-Ho Moon

Kyu-Sik Cho

Jong-Won Hong

Young-Soo Yoon

Heung-Yeol Na

Byoung-Seong Jeong

Seok-Rak Chang

Byoung-Kwon Choo

Byung-Sik Koh

Hyun-Woo Koo

Ivan Maidanchuk

Kyeng-Eun Roh

Ki-Young Lee

Kii-Won Lee

A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Thin film transistor and organic light emitting device including polycrystalline silicon layer

A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.

Thin film transistor, method of manufacturing active layers of the thin film transistor, and display device

A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

Display device and method of manufacturing the same

A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.

Thin film transistor substrate, method of manufacturing the same, and display apparatus having the same which improve switching characteristics

Method of forming polycrystalline silicon layer, and thin film transistor and organic light emitting device including the polycrystalline silicon layer

A method of manufacturing an organic light-emitting display apparatus includes: preparing a substrate including a display unit and peripheral parts; forming a cutting line on an encapsulation sheet to correspond to a boundary line between the display unit and the peripheral parts, wherein a size of the encapsulation sheet corresponds to that of the substrate; adhering the substrate and the encapsulation sheet together; removing the peripheral parts of the substrate; and cutting the encapsulation sheet along the cutting line. According to the method, a step height is not generated between the substrate and the encapsulation sheet when cutting the substrate and thus cracks may be avoided. Accordingly, products may be stably produced.

Method of manufacturing organic light-emitting display apparatus and encapsulation sheet used in the method

A metal encapsulating sheet is configured to cover a display unit on a substrate and includes an insulating base film, and metal wirings on the base film for forming a current path between the display unit and a power supply, wherein connecting units of the metal wirings coupled to the power supply are outside a light-emitting region corresponding to the display unit.

Metal encapsulating sheet and organic light-emitting display apparatus including the same

A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern.

Thin film transistor, display device thereof, and manufacturing method thereof

A substrate including a thin film transistor, the substrate including an active layer disposed on the substrate, the active layer including a channel area and source and drain areas, a gate electrode disposed on the active layer, the channel area corresponding to the gate electrode, a gate insulating layer interposed between the active layer and the gate electrode, an interlayer insulating layer disposed to cover the active layer and the gate electrode, the interlayer insulating layer having first and second contact holes partially exposing the active layer, source and drain electrodes disposed on the interlayer insulating layer, the source and drain areas corresponding to the source and drain electrodes, and ohmic contact layers, the ohmic contact layers being interposed between the interlayer insulating layer and the source and drain electrodes, and contacting the source and drain areas through the first and second contact holes.

Method of manufacturing substrate including thin film transistor

A method of crystallizing a silicon layer and a method of manufacturing a thin film transistor using the same, the method of crystallizing the silicon layer including forming an amorphous silicon layer on a substrate; performing a hydrophobicity treatment on a surface of the amorphous silicon layer so as to obtain a hydrophobic surface thereon; forming a metallic catalyst on the amorphous silicon layer that has been subjected to the hydrophobicity treatment; and heat-treating the amorphous silicon layer including the metallic catalyst thereon to crystallize the amorphous silicon layer into a polycrystalline silicon layer.

Method of crystallizing silicon layer and method of forming a thin film transistor using the same

A thin film transistor includes a substrate, a semiconductor layer provided on the substrate and crystallized by using a metal catalyst, a gate electrode insulated from and disposed on the semiconductor layer, and a getter layer disposed between the semiconductor layer and the gate electrode and formed with a metal oxide having a diffusion coefficient that is less than that of the metal catalyst in the semiconductor layer.

Thin film transistor, method for manufacturing the same, and display device using the same

A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same

Substrate including thin film transistor, method of manufacturing the substrate, and organic light emitting display apparatus including the substrate

A method of crystallizing a silicon layer and a method of manufacturing a TFT, the method of crystallizing a silicon layer including forming a catalyst metal layer on a substrate; forming a catalyst metal capping pattern on the catalyst metal layer; forming a second amorphous silicon layer on the catalyst metal capping pattern; and heat-treating the second amorphous silicon layer to form a polycrystalline silicon layer.

Method of forming a polycrystalline silicon layer and method of manufacturing thin film transistor

Growing community of inventors

Yongin, South Korea

Seung-Kyu Park