Hynix Semiconductor Inc.

Seung Kyu Han

Dong Su Park

Nam Kyeong Kim

Ki Seon Park

Byoung Kwon Ahn

In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Method for forming capacitor of nonvolatile semiconductor memory device

Nonvolatile semiconductor memory device

A capacitor of a semiconductor device and the method of manufacture thereof, includes the steps of providing a semiconductor substrate; forming a lower electrode on the semiconductor substrate; forming a nitride layer on the upper part of the lower electrode; forming an oxide tin layer SnO on the upper part of the nitride layer; forming an amorphous TaON layer on the upper part of the oxide tin layer; diffusing oxygen and tin in the oxide tin layer and amorphous TaON layer by thermal treatment, thereby changing the layers into Ta&mdash;C&mdash;Sn layer; and forming an upper electrode on the upper part of the Ta&mdash;O&mdash;Sn layer.

Capacitor of a semiconductor device and method of manufacturing the same

Method for manufacturing capacitor in semiconductor device

Growing community of inventors

Seoul, South Korea

Seung Kyu Han