Samsung Electronics Co., Ltd.

Ulvac, Inc.

Forhuman Co., Ltd.

Cheil Industries Inc.

Seung-Ki Chae

Jung-Dae Park

Yang-Koo Lee

Kwang-Myung Lee

Pil-Kwon Jun

Pil-kwon Jun

Kwang-Shin Lim

Tae-Hyo Choi

Sang-Ho Lee

Hun-Jung Yi

Yong-hee Lee

Sang-Gon Lee

Seiichi Takahashi

Dong-Hwa Shin

Ki-Young Yun

Da-Hee Lee

No-Hyun Huh

Se-Yeon Kim

Kengo Tsutsumi

Sue-Ryeon Kim

Yun-mo Yang

Myoung-Ok Han

Byong-Cheol Park

Je-Gu Lee

Sang-gon Lee

In-ju Lee

Kyoung-hye Lee

Won-yeong Kim

Jin-ok Jung

Kook-Joo Kim

Young-jo Shin

Shinji Yanagisawa

Jae-sun Jeon

Jae-Hyun Han

Sung-Wook Park

Jin-Ho Kim

Young-Tae Kim

Tai-Kyung Kim

Jung-Hyun Hwang

Yun-sik Yang

Il-Kyoung Kim

Hyung-Sik Hong

Sun-Hee Park

Ui-hui Kwon

Wan-Goo Hwang

Gyeong-Su Keum

Woo-Seok Kim

Hun Cha

Jae-Wook Kim

Jae-Hyuck An

Kwang-Ho Cha

Tea-Jin Park

Myeong-Jin Kim

Jae-Seok Lee

Mikio Takagi

Seung-un Kim

Seung-Un Kim

Gyeong-su Keum

Won-young Chung

Doo-Guen Song

Jai-kang Jeon

Yong-wook Lee

Seung-Hoon Ahn

Dong-Won Hwang

Jai-hyung Won

Tae-Sub Im

Hyun-Kyu Kang

Yu-kweon Kim

Young-seok Roh

Bo-Yong Lee

Jae-Hyuk An

Jea-Wook Kim

Sang-Hyuk Chung

Seong-Jin Heo

Gyoung-Eun Byun

Jung-In La

Heung-Bin Lim

Won-Kyung Ryu

Kyoung-Ho Jang

Jin-Phil Choi

Kee-Soo Park

Young-kwan Park

Sang-Yeob Cha

Gil-Jung Yun

In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

Semiconductor devices and methods of manufacturing the same

A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.

Etching apparatus and etching method

Provided is a vacuum pump having a rotation body cleaning unit. The vacuum pump includes a case provided with rotation guide holes at opposite end parts. The case includes a rotation body placed inside the case and including a rotation shaft having opposite ends rotatably supported by the rotation guide holes and a number of lobes provided in the rotation shaft at predetermined intervals. Further, a cleaning part is supported by the case and placed in a space between the lobes and cleans the rotation body.

Vacuum pump having rotation body cleaning unit with spraying holes on an output surface of the cleaning body surrounding a shaft

A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

Method of cleaning a quartz part

The apparatus for decomposing PFCs includes an external electrode unit which is coupled to a reference voltage and which defines a flow space for the flow of the PFCs, and an internal electrode unit which is located within the flow space of the external electrode unit so as to define a reaction space between the internal electrode unit and the external electrode unit. The apparatus is also equipped with a voltage supply unit which applies an alternating voltage to the internal electrode unit which is of sufficient voltage and frequency to generate an electron beam within the reaction space which is capable of decomposing the PFCs.

Apparatus for decomposing perfluorinated compounds and system for processing perfluorinated compounds using the apparatus

A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

Methods of manufacturing a semiconductor device using compositions for etching copper

Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.

Apparatus and method for analyzing contaminants on wafer

In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

Composition for etching silicon oxide and method of forming a contact hole using the same

A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where Ris a hydroxyl group or a hydroxyalkyl group, and Ris a hydrogen atom or a hydroxyalkyl group.

Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition

A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.

Laser cleaning of backside of wafer for photolithographic processing

In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamberexcessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

Etching method

Provided are methods and apparatus for exposing multiple substrates within a single exposing apparatus using only a single light source wherein a first substrate is exposed in a series of steps or shots during which light transmitted along a primary optical path is directed onto a primary surface of the substrate with the substrate being repositioned between sequential shots. A second substrate is exposed during the period of time while the first substrate is being repositioned by altering the optical path to divert the light from the light source into a secondary optical path that will expose a region on the second substrate. When the first substrate has been repositioned, the diversion of the light is terminated so that the light will again be transmitted along the primary optical path in order to expose the next sequential shot on the primary surface of the first substrate.

Method and apparatus for exposing semiconductor substrates

A method of manufacture includes processing an object in a chamber and subsequently generating an electrical force of attraction to float contaminants off of a region adjacent the processed object before the object is unloaded from the chamber. The object may be processed with the use of plasma. The plasma is produced by introducing a first gas into the chamber and applying a source power to the first gas. The plasma is extinguished after the object is processed with the use of the plasma. Then, a second gas is introduced into the chamber and a source power is applied to the second gas to generate the electrical force of attraction. At this time, the parameters are controlled so that particle contaminants are readily removed without any influence on the object. Also, the same electrode can be used to apply source power to both the first and second gas. Thus, the operation of removing the particle contaminants is relatively simple.

Method of processing an object and method of controlling processing apparatus to prevent contamination of the object

A method of exposing a wafer to a light comprises transferring an image onto a plurality of shot areas by irradiating a projection light, each of the plurality of shot areas including at least one die area defined on the wafer on which a photoresist film is formed, and scanning the at least one die area adjacent to an edge portion of the wafer by irradiating a scanning light.

Method of exposing a wafer to a light, and reticle, reticle assembly and exposing apparatus for performing the same

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Seoul, South Korea

Seung-Ki Chae