Samsung Electronics Co., Ltd.

Seung-Kee Yang

Sang-Hoon Park

Hwa-Young Kang

Do-Young Rhee

Dong-Soo Bang

Sang-Uk Park

Seung-Gil Jeon

Byung-Ok Jeon

Jea-Myung Baek

Ahn-Goo Choo

A light receiving element for converting a received light signal into an electric signal and its manufacturing method are disclosed. The light receiving element includes a semiconductor substrate of a first conduction type; a semiconductor layer of a second conduction type; and a photo-absorption layer interposed between the semiconductor substrate and the semiconductor layer of the second conduction type. The semiconductor substrate comprises: a first groove having an inclination with respect to an incidence plane of the light signal so that the light signal can be refracted when the light signal has been incident to the first groove; and a second groove by which the light signal having been refracted by the first groove is reflected fully and then absorbed into the photo-absorption layer, so that a vertical-incidence drift of the light signal toward the photo-absorption layer is minimized.

Light receiving element and method of manufacturing the same

An optical apparatus having a vertical light receiving element is disclosed. The optical apparatus is configured to couple light generated from a light source using the vertical light receiving element, then transforms the received light signals into an electric signal. The optical apparatus includes: a vertical photo detector having a photo-absorption layer; and an optical bench on which the photo detector is disposed. The optical bench having a first groove and a second groove formed adjacent to each other, the first groove having a predetermined inclination and being formed at an edge of a first surface of the optical bench, and the first surface being opposite to a second surface of the optical bench, on which the photo detector is disposed, such that a light signal incident to the first groove is refracted at a predetermined angle by the first groove; and the light signal, which has been refracted by the first groove, is totally reflected by the second groove. As a result, that the light signal is substantially and vertically incident into the photo-absorption layer.

Optical apparatus using vertical light receiving element

Disclosed is a photodiode having a p-type electrode of a mushroom shape. The p-type electrode is formed in a mushroom shape, so that the contact area faced by the spreading region of a dopant for the photodiode and the electrode can be minimized and the capacitance of the photodiode can be reduced. Further, the p-type electrode is configured to have a broader width in its upper end, thus allowing the wire bonding to be performed easily.

Photodiode for ultra high speed optical communication and fabrication method therefor

Disclosed is a photodiode detector including: an InP substrate; a u-In Ga As layer grown and stacked on the InP substrate; an u-Inp layer stacked on an upper portion of the u-In Ga As layer; a SiNx insulation layer stacked on an upper portion of u-Inp layer; an additional insulation layer stacked on an upper portion of the SiNx insulation layer; a P-InP layer formed by Zn diffusing on an u-Inp layer portion below an opening formed on a predetermined position between the additional insulation layer and the SiNx insulation layer; a P-metal layer positioned on an upper portion of the additional insulation layer; and an N-metal layer formed on a lower portion of the InP substrate together with a non-reflection layer. The photodiode detector of the present invention, forms BCB material having a low dielectric constant, which is relatively thick, on the upper portion of the SiNx insulation layer, thereby obtaining the desired capacitance.

Photodiode detector and fabrication method thereof

An avalanche photodiode fabricating method with a simplified fabrication process and an improved reproducibility is disclosed. The method for fabricating an avalanche photodiode includes the steps of: (a) sequentially stacking, on an n-type InP substrate, an, InP buffer layer, an InGaAs absorption layer, an n-type InGaAsP grading layer, an n-type InP current adjusting layer, and an InP amplifying layer; (b) forming a protection layer on the InP amplifying layer, etching a light-receiving area of the protection layer and the InP amplifying layer to a predetermined depth, and partially etching the protection layer to expose a FGR forming area of the InP amplifying layer; (c) diffusing a diffusion source in the etched light-receiving area and the exposed FGR forming area; (d) forming a reflection suppressing layer on the diffusion layer formed on the light-receiving area by diffusing the diffusion source, the FGR layer and the exposed amplifying layer; (e) forming an upper electrode layer to a predetermined depth from the reflection suppressing layer to the diffusion layer formed on the light-receiving area; and, (f) forming a lower electrode layer on a back of the substrate.

Growing community of inventors

Suwon-shi, South Korea

Seung-Kee Yang