Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Seung Ju Park

Jeong Yun Lee

Geum Jung Seong

Seung Soo Hong

Sang Hyun Lee

Young Mook Oh

Bo Ra Lim

Kyung Seok Min

Yun Sik Jang

Ji-hoon Kim

Sang-Gu Lee

Beong-hun Beon

Seung Seok Ha

Seung Hee Lee

Do Hyoung Kim

Kyoung Hwan Yeo

Ki Byung Park

Myeong Cheol Kim

Keun Hee Bai

Jae Hyoung Koo

A semiconductor device capable of improving operation performance and reliability, may include a gate insulating support to isolate gate electrodes that are adjacent in a length direction. The semiconductor device includes a first gate structure on a substrate, the first gate structure extending lengthwise in a first direction to have two long sides and two short sides, relative to each other, and including a first gate spacer; a second gate structure on the substrate, the second gate structure extending lengthwise in the first direction to have two long sides and two short sides, relative to each other, and including a second gate spacer, wherein a first short side of the second gate structure faces a first short side of the first gate structure; and a gate insulating support disposed between the first short side of the first gate structure and the first short side of the second gate structure and extending lengthwise in a second direction different from the first direction, a length of the gate insulating support in the second direction being greater than a width of each of the first gate structure and the second gate structure in the second direction.

Semiconductor device and method for fabricating the same

Semiconductor devices as described herein may include a fin-shaped pattern extending in a first direction, first and second side walls facing each other, first and second gate electrodes extending in a second direction and spaced apart from each other, a first gate spacer that is on a side wall of the first gate electrode, a second gate spacer that is on a side wall of the second gate electrode, a first trench in the fin-shaped pattern that is between the first and second gate electrodes and having a first width, and a second trench in the fin-shaped pattern that is below the first trench and has a second width smaller than the first width. The fin-shaped pattern may include first and second inflection points on the side walls of the fin-shaped pattern, and a bottom surface of the second trench may be lower than the inflection points.

Semiconductor devices having fin-shaped patterns with inflection points

A semiconductor device is provided including first and second active fin arrays on a substrate. The semiconductor device further includes a pair of first gate spacers disposed on the first and second active fin arrays, each of the pair of first gate spacers including a first region having a first width, a second region having a second width, and a third region between the first region and the second region and having a third width; and first and second gate electrodes, the first gate electrode disposed between the first regions and the second gate electrode disposed between the second regions. The first regions are on the first active fin array, the second regions are on the second active fin array, and the third regions are between the first active fin array and the second active fin array. Each of the first and second widths is greater than the third width.

Semiconductor devices and methods of manufacturing the same

There is provided a method for manufacturing a semiconductor device including a substrate including a plurality of active regions, a plurality of gate electrodes extending in a first direction to intersect a portion of the plurality of active regions, and including first and second gate electrodes disposed to be adjacent to each other in the first direction, a gate isolation portion disposed between the first and second gate electrodes. The gate isolation portion includes a first layer and second layers disposed on both ends of the first layer in a second direction perpendicular to the first direction.

Method for manufacturing semiconductor device

A display device includes a lens with an adjustable refractive index. The display device includes a display panel including a plurality of pixels, a backlight unit positioned at a back side of the display panel to emit light of a first color and light of a second color to the display panel at different times, the first color and the second color being different from each other; and a lens unit positioned at a front side of the display panel to form at least one lens in a 3D mode. The lens unit includes a plurality of electrodes for adjusting a refractive index of the lens, and a signal applied to the electrodes when the backlight unit emits the light of the first color is different from a signal applied to the electrodes when the backlight unit emits the light of the second color.

Display device including lens

Growing community of inventors

Hwaseong-si, South Korea

Seung Ju Park