Tanaka Kikinzoku Kogyo K.k.

Seung-Joon Lee

Ryosuke Harada

Toshiyuki Shigetomi

Shigeyuki Ootake

Teruhisa Iwai

Tomohiro Tsugawa

Ketan Baban Katkar

A raw material for chemical deposition for producing a manganese thin film or a manganese compound thin film by chemical deposition method, including an organomanganese compound represented Chemical Formula 1 in which a cyclopentadienyl ligand and an isocyanide ligand are coordinated to manganese, which has basic characteristics as a raw material for chemical deposition and enables formation of a manganese thin film with a reducing gas such as hydrogen used as a reaction gas.

Chemical vapor deposition method using an organomanganese compound as a starting material

The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand Lis represented by the following Formula 2:

Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition

The present invention relates to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing a ruthenium complex represented by the following Chemical Formula 1. In Chemical Formula 1, ligands Land Lcoordinated to ruthenium are represented by the following Chemical Formula 2. The raw material for chemical deposition according to the present invention can be formed into a high quality thin film even if a reaction gas containing an oxygen atom is not used. 

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Tsukuba, Japan

Seung-Joon Lee