Samsung Electronics Co., Ltd.

Seung-Jin Choo

Sang-Woo Pae

Jae-Hee Choi

Jong-wook Jeon

Hyun-chul Sagong

Hyun-Chul Sagong

A semiconductor device includes a substrate, a thermal conduction layer on the substrate, a first wire pattern on the thermal conduction layer, a first semiconductor pattern a second semiconductor pattern, and a gate electrode between the first semiconductor pattern and the second semiconductor pattern. The gate electrode surrounds a periphery of the first wire pattern. A concentration of impurity of the thermal conduction layer is different from that of the substrate. The first wire pattern includes a first end and a second end. The concentration of impurity contained in the first wire pattern is higher than that contained in the thermal conduction layer and that contained in the substrate. The first semiconductor pattern is in contact with the first end of the first wire pattern and the thermal conduction layer. The second semiconductor pattern is in contact with the second end of the first wire pattern.

Semiconductor device

A semiconductor device includes a first fin pattern, which includes a first lower pattern and a first upper pattern stacked sequentially on a substrate, the first upper pattern including a first part and second parts respectively disposed on both sides of the first part, a gate electrode, which is formed on the first part to intersect the first fin pattern, and source/drain regions, which are formed on the second parts, respectively. A dopant concentration of the first upper pattern is higher than a dopant concentration of the first lower pattern and a dopant concentration of the substrate, and the dopant concentration of the first lower pattern is different from the dopant concentration of the substrate.

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Suwon-si, South Korea

Seung-Jin Choo