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Seung Jae Yun

Yong Woo Lee

Se Wan Son

Woo Chang Lim

Seung Ki Joo

Chang Woo Byun

Sang Joo Lee

Hyun Mo Kang

Tao Li

Seol Ah Park

Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds.

Method for crystallizing amorphous silicon thin film and method for fabricating poly crystalline thin film transistor using the same

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Seoul, South Korea

Seung Jae Yun