Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Rohm and Haas Electronics Materials LLC

The Penn State Research Foundation

Seung-Hyun Lee

Young Cheol Bae

Jong Keun Park

Rosemary Bell

Yi Liu

Thomas Cardolaccia

Jibin Sun

Cheng-Bai Xu

Cong Liu

Shintaro Yamada

Gerhard Pohlers

Matthias Stefan Ober

George L Athens

Thomas Peterson

Elissei Iagodkine

Kevin Rowell

Krishna Balantrapu

Cecily Andes

Enrique Daniel Gomez

Thomas Charles Sutter

Matthew M Meyer

Thomas A Estelle

Wenyan Yin

Kiarash Vakhshouri, Iii

Disclosed herein is a composition comprising a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene]; where the composition is melted and then cooled to a temperature between a melting point and a glass transition temperature of the composition; the composition having an amount of crystallinity that is at least twice the amount of crystallinity of another identical composition that is crystallized by a method that does not involve melting and cooling to a temperature between the melting point and the glass transition temperature of the identical composition.

Highly crystalline electrically conducting polymers, methods of manufacture thereof and articles comprising the same

Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

Photolithographic methods

Photoresist overcoat compositions and methods of forming electronic devices

Provided are compositions and methods for trimming a photoresist pattern. The photoresist pattern trimming composition comprises: a matrix polymer comprising a unit formed from a monomer of the following general formula (I): wherein: Ris chosen from hydrogen, fluorine, C-Calkyl and C-Cfluoroalkyl; Ris chosen from C-Calkylene; and Ris chosen from C-Cfluoroalkyl; an aromatic acid that is free of fluorine; and a solvent. The compositions and methods find particular applicability in the manufacture of semiconductor devices.

Photoresist pattern trimming compositions and methods

Polymers containing a unit having a particular acetal moiety and photoresist compositions containing such a polymer. Substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, photoresist compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Polymers, photoresist compositions and methods of forming photolithographic patterns

Provided are photoresist developer compositions that include a mixture of organic solvents. Also provided are methods of forming photolithographic patterns using negative tone development, coated substrates and electronic devices formed by the methods. The methods find particular applicability in the manufacture of electronic devices.

Developer compositions and methods of forming photolithographic patterns

Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Photoresist compositions and methods of forming photolithographic patterns

Provided are methods of forming photolithographic patterns by negative tone development. The methods employ a photoresist composition that includes a polymer having a unit of the following general formula (I): wherein: Rrepresents hydrogen or a Cto Calkyl group; a represents an integer from 1 to 3; and b represents 0 or 1. The methods find particular applicability in the manufacture of semiconductor devices.

Methods of forming photolithographic patterns by negative tone development

Provided are (meth)acrylate monomers containing acetal moieties, polymers containing a unit formed from such a monomer and photoresist compositions containing such a polymer. The monomers, polymers and photoresist compositions are useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions, methods of forming photolithographic patterns and electronic devices. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Monomers, polymers, photoresist compositions and methods of forming photolithographic patterns

Polymers include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety, photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Growing community of inventors

Marlborough, MA, United States of America

Seung-Hyun Lee