Db Hitek Co., Ltd.

Seung-Hyun Eom

Hyun-jin Kim

Ki-Won Lim

Jin-Hyo Jung

Hae-Taek Kim

Yong-Jin Kim

Sang-Gil Kim

Ja-Geon Koo

Hyun-Joong Lee

Sang-Yong Lee

Provided is an RF switch device () in which body contact regions () are formed at respective positions adjacent to or partially overlapping opposite ends of a gate region () so that holes in a body of the device can escape or flow in either or both of two directions, rather than in only a single direction.

RF switch device

A bipolar junction transistor, a BiCMOS device including same, and a method of manufacturing the BiCMOS device are disclosed. To fabricate the BiCMOS device, a bipolar region and a CMOS region are on a lightly doped substrate to enhance isolation between devices. First-conductivity-type deep well regions are in the bipolar region and/or the CMOS region to prevent well-to-substrate diffusion.

Bipolar junction transistor, BiCOMOS device including same, and method of manufacturing BiCMOS device

Growing community of inventors

Seoul, South Korea

Seung-Hyun Eom