1. Qualcomm Incorporated (228 from 40,652 patents)

2. Yonsei University (19 from 1,309 patents)

3. Agere Systems Inc. (12 from 2,315 patents)

4. Qualcomm Technologies, Inc. (6 from 158 patents)

5. Industry-academic Cooperation Foundation (2 from 21 patents)

6. Other (1 from 832,347 patents)

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2. 11823052 - Configurable MAC for neural network applications

3. 11710733 - Vertical power grid standard cell architecture

4. 11476186 - MIMCAP architecture

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6. 11404374 - Circuits employing a back side-front side connection structure for coupling back side routing to front side routing, and related complementary metal oxide semiconductor (CMOS) circuits and methods

7. 11290109 - Multibit multi-height cell to improve pin accessibility

8. 11237580 - Systems and methods providing leakage reduction for power gated domains

9. 10868238 - Magnetic tunnel junction integration without patterning process

10. 10833254 - Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory

11. 10811068 - Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications

12. 10803942 - Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods

13. 10740017 - Dynamic memory protection

14. 10636962 - Spin-orbit torque (SOT) magnetic tunnel junction (MTJ) (SOT-MTJ) devices employing perpendicular and in-plane free layer magnetic anisotropy to facilitate perpendicular magnetic orientation switching, suitable for use in memory systems for storing data

15. 10615988 - Compact and reliable physical unclonable function devices and methods