Korea Institute of Science and Technology

Ulsan National Institute of Science and Technology

Seung Hyub Baek

Chong Yun Kang

Jin Sang Kim

Seong Keun Kim

Ji-Won Choi

Sang Tae Kim

Ji Won Choi

Seok Jin Yoon

Hyun-Cheol Song

Hyun Cheol Song

Won Jun Choi

Hyun Seok Lee

Sanghyeon Kim

Ki-Suk Lee

Jeong Min Baik

Young Ho Do

Tae Hyeon Kil

Yong-Won Song

Hyunjung Yi

Christopher W Bielawski

Young-Shin Lee

Beomjin Kwon

Woo-Suk Jung

Won Jae Lee

Woo Chui Lee

Eric S Larsen

Narendra Singh Parmar

Youn-hwan Shin

Jung Hwan Yum

Shin Ik Kim

Proposed is a self-resonance tuning piezoelectric energy harvester with broadband frequency, including: a piezoelectric beam which is extended along a horizontal direction; a fixing member which fixes opposite ends of the piezoelectric beam; and a mobile mass which the piezoelectric beam passes through, and which is capable of self-movement along the piezoelectric beam through a through-hole which has a free space in addition to a space which the piezoelectric beam passes through, wherein as the mobile mass moves to a position of the piezoelectric beam, generated displacement of a piezoelectric beam is increased, and as the generated displacement becomes greater than the free space, the mobile mass is fixed to a position of a piezoelectric beam at which resonance will occur.

Self-resonance tuning piezoelectric energy with broadband frequency

Disclosed herein is a smart wearable lens mounted with an all-solid-state thin film secondary battery including a flexible substrate, a cathode current collector, a cathode, a solid electrolyte, an anode, and an anode current collector. The smart wearable lens mounted with the all-solid-state thin film secondary battery may be stably and continuously supplied with power and has a low self-discharge rate. In addition, the smart wearable lens may minimize aversion when humans are wearing the smart wearable lens and be suitably used for a curved lens, especially a micro-lens such as a contact lens.

Smart wearable lens mounted with all-solid-state thin film secondary battery and method for manufacturing the same

Disclosed is a transparent anode thin film comprising a transparent anode active material layer, wherein the transparent anode active material layer comprises a Si-based anode active material having a composition represented by the following [Chemical Formula 1]:SiN&#x2003;&#x2003;[Chemical Formula 1]

Transparent anode thin film comprising a transparent anode active material, lithium thin film secondary battery, and the method for manufacturing the same

Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BeMO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below,BeMO,

Dielectric layer and a semiconductor memory device including the dielectric layer as a capacitor dielectric layer

A method of manufacturing an electrode layer and a method of manufacturing a capacitor using the same are provided. The method of manufacturing the electrode layer includes performing a first sub-cycle sequentially providing a tin precursor and an oxygen source on a substrate, performing a second sub-cycle sequentially providing a tin precursor, a tantalum precursor, and an oxygen source on the substrate on which the first sub-cycle is performed, and repeating a cycle including the first sub-cycle and the second sub-cycle to form a tantalum-doped tin oxide layer on the substrate. A tantalum concentration in the tantalum-doped tin oxide layer is determined by the tin precursor provided in the second sub-cycle.

Method of manufacturing electrode layer, method of manufacturing capacitor using the same, capacitor, and memory device including the same

Provided is a self-resonance tuning piezoelectric energy harvester. The self-resonance tuning piezoelectric energy harvester includes a piezoelectric beam which extends along a horizontal direction, a fixing element which fixes two ends of the piezoelectric beam, and a mass which is connected to the piezoelectric beam movably along the piezoelectric beam, wherein the mass includes a through-hole through which the piezoelectric beam passes, and makes the movement through the through-hole. According to the principle of continuous movement to the resonance position, the mass of the self-resonance tuning piezoelectric energy harvester induces the piezoelectric beam to generate displacement to the maximum and maximize the electricity production capacity of the piezoelectric energy harvester.

Self-resonance tuning piezoelectric energy harvester with broadband operation frequency

The present disclosure relates to a paste for ohmic contact to p-type semiconductor, including a metal oxide and a binder, wherein the metal oxide is a rhenium oxide or a molybdenum oxide.

Paste for ohmic contact to P-type semiconductor and method for forming ohmic contact to P-type semiconductor using the same

Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO) thin film in monoclinic VOcrystal phase by deposition of VOon oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VOthin film in monoclinic crystal phase formed on the oxide thin film with perovskite structure.

Thin film structure for micro-bolometer and method for fabricating the same

Disclosed is a resistor thin film for micro-bolometer for growth of a vanadium dioxide (VO) thin film in tetragonal VOcrystal phase by deposition of VOon oxide with perovskite structure and a method for fabricating the same, and the resistor thin film for micro-bolometer according to the present disclosure includes a silicon substrate, an oxide thin film with perovskite structure formed on the silicon substrate, and a VOthin film in tetragonal crystal phase formed on the oxide thin film with perovskite structure.

Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The curved piezoelectric device includes: a curved substrate; and a piezoelectric material provided on one surface or both surfaces of the curved substrate, wherein when a stress is applied, a neutral plane in which a compressive stress and a tensile stress are balanced is located in the curved substrate, wherein the location of the neutral plane is determined by yand yof Equation 1 or 2 below, and wherein the location of the neutral plane is controllable by adjusting a thickness (d), a sectional area (A) and a Young's modulus (E) of each of the curved substrate and the piezoelectric material: wherein 

Curved piezoelectric device

Provided are a method of manufacturing a flexible piezoelectric energy harvesting device using a piezoelectric composite, and a flexible piezoelectric energy harvesting device manufactured by the same. The method of manufacturing the flexible piezoelectric energy harvesting device includes: forming a first electrode layer on a first flexible substrate; spin-coating a piezoelectric composite layer on the first electrode layer, wherein the piezoelectric composite layer is produced by mixing piezoelectric powder with polymer; performing heat treatment on the piezoelectric composite layer to harden the piezoelectric composite layer; and bonding a second flexible substrate with a second electrode layer on the hardened piezoelectric composite layer. Therefore, it is possible to simplify a manufacturing process and manufacture a high-performance flexible piezoelectric energy harvesting device having various sizes and patterns.

Method of manufacturing flexible piezoelectric energy harvesting device

Provided is an oxide electronic device, including: an oxide substrate; an oxide thin film layer formed on the oxide substrate and containing an oxide that is heterogeneous with respect to the oxide substrate; and a ferroelectric layer formed on the oxide thin film layer and controlling electric conductivity of two-dimensional electron gas (2DEG) generated at an interface between the oxide substrate and the oxide thin film layer. Provided also is a method for manufacturing an oxide electronic device, including: depositing, on an oxide substrate, an oxide that is heterogeneous with respect to the oxide substrate to form an oxide thin film layer; and forming a ferroelectric layer on the oxide thin film layer, wherein the ferroelectric layer controls electric conductivity of 2DEG generated at an interface between the oxide substrate and the oxide thin film layer.

Oxide electronic device and method for manufacturing the same

Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.

Growing community of inventors

Seoul, South Korea

Seung Hyub Baek