Samsung Electronics Co., Ltd.

Seung Hwan Song

Il Han Park

Dae Seok Byeon

Hyun Jun Yoon

Han Jun Lee

Jin Bae Bang

Na Young Choi

Jaehong Kim

Yong June Kim

A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.

Nonvolatile memory device configured to adjust a read parameter based on degradation level

Nonvolatile memory device configured to adjust a read parameter based on a degradation level

A method, implemented by at least an error correction code (ECC) decoder and a controller, estimates and corrects errors in memory cells. The method includes identifying a first candidate group of memory cells having an error-generation possibility using a first method for error estimation; identifying a second candidate group of memory cells having an error-generation possibility using a second method for error estimation; and correcting errors in at least one cell commonly included in the first and second candidate groups.

Method of estimating and correcting errors in memory cells

Growing community of inventors

Incheon, South Korea

Seung Hwan Song