Samsung Electronics Co., Ltd.

Skhynix Inc.

Seung-Hwan Kim

Sang-Soo Kim

Austin Kim

Su-Ock Chung

Jae-Ho Lee

Sung-Hee Lee

Dong-Hwan Kim

Joon-Ho Byun

Kyung-Jong Lee

Dong-Soo Woo

Ji-Young Kim

Harkirat Singh

Jae-min Lee

Jae-Bong Chun

Seung-kwon Park

Il-ju Na

Bong-hwan Cho

Dong Ho Lee

Hee-Seok Lee

Woo-Yong Lee

Ji-Yong Park

Jung-Ho Park

Hyun Sik Park

Sang-Uk Han

Jeong-Kyu Ha

Jae-Min Lee

Kweon-Sam Hong

Ji-Sung Oh

Yong-Jin Kim

Seon-Yong Cha

Hyung-Weon Park

Dae-Sin Kim

Na-Ra Kim

Jung-Ho Ahn

Young-Sung Lee

Ji Hyeoung Lee

Chul-Woo Kim

Kwang-Jin Bae

Soo-Young Jang

Chang Sun Yun

Ho-Saeng Kim

Sua Kim

Kwan-Jai Lee

Kyung-Jae Lee

Sang-Gui Jo

Hyun-Ki Kim

Young-Shin Kwon

Sang-Ha Lee

Gi-Uk Gang

Dae-Sun Kim

Sung-Min Her

Jun-young Oh

Sang-Bong Sung

Kwan Joon Kim

Jun-Yeub Lee

Kyung-Bin Kim

Seung-Kwon Park

Sang-Kueon Lee

Byeong-Hwan Youm

Hyeon-Uk Kang

Kyoung-Mok Kim

Eun Dae Bae

Heung Mun Oh

Se-Woong Kim

Sung-Wook Cha

Eui-chul Jeong

Yong-Kwan Lee

Il-Ju Na

Bong-Hwan Cho

S Konstantin Krylov

A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Vertical memory device

A memory device includes: a substrate; a bit line which is vertically oriented from the substrate; a plate line which is vertically oriented from the substrate; and a memory cell provided with a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line, wherein the transistor includes: an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and a line-shaped lower word line and a line-shaped upper word line vertically stacked with the active layer therebetween and oriented to intersect with the active layer.

Vertical memory device with a double word line structure

Provided is a cooking apparatus including: an induction heating coil that generates a magnetic field heating a cooking container; and an image generating unit that radiates light so that an image is generated on a surface of the cooking container, wherein the image generating unit includes: a plurality of light sources that radiate light toward the cooking container; a light source driving circuit that provides driving currents to the plurality of light sources; and a light-emitting controller that controls the light source driving circuit.

Cooking apparatus

A semiconductor device including a semiconductor substrate including a plurality of active regions and a device isolation region for isolating the plurality of active regions; and a buried bit line and a buried gate electrode which are formed in the semiconductor substrate. The device isolation region includes a first device isolation region extending in a first direction and a second device isolation region extending in a second direction crossing with the first direction and having a shield pillar formed therein.

Semiconductor device having air gap and method for manufacturing the same, memory cell having the same and electronic device having the same

A method for fabricating a semiconductor device may include: forming a plurality of first isolation trenches and a plurality of line-shaped active regions by etching a semiconductor substrate; forming a line-shaped device isolation region in each of the plurality of first isolation trenches; forming a plurality of second isolation trenches extending in a second direction by etching the plurality of line-shaped active regions and the plurality of line-shaped device isolation regions; forming a connection trench to connect the plurality of second isolation trenches to each other; forming a shielding line in each of the plurality of second isolation trenches; and forming a shielding line interconnection in the connection trench.

An electronic device is provided. The electronic device includes a front cover forming a front surface, a rear cover forming a rear surface, a sidewall at least partially enclosing a space formed between the front cover and the rear cover and at least partially formed of a conductive member, a display disposed in the space and including a screen region exposed through the front cover, a non-conductive structure disposed in adjacent to the sidewall or in contact with the sidewall in the space and including a first surface facing the front cover and a second surface facing the rear cover, a first antenna pattern overlapping the non-conductive structure and fed with electricity, a second antenna pattern overlapping the non-conductive structure and disposed adjacent to the first antenna pattern to form electromagnetic-field coupling with the first antenna pattern, and an integrated circuit chip feeding electricity to the first antenna pattern.

Electronic device including antenna device

An oven including a heater arranged in a cooking compartment, a temperature sensor to sense a temperature of the cooking compartment for a plurality of preset periods of time, and a controller to reset on/offtimes of the heater for at least one of the plurality of preset periods based on a preset target temperature and a current temperature and a previous temperature of the cooking compartment, sensed by the temperature sensor, and to control a driving of the heater according to the reset on/off times. By controlling the on/off times of the heater, a ripple phenomenon which occurs because the target temperature does not remain the same may be decreased. Thus, temperature differences may be reduced during cooking of food and, accordingly, cooking ability may be enhanced.

Oven and method for controlling the same

A mobile terminal with an antenna apparatus is provided. The mobile terminal in one embodiment includes an antenna radiator disposed at a first end of the mobile terminal; at least one antenna modifying element disposed at a second, opposing end of the mobile terminal; and a coupling unit for fastening the first and second ends and electrically connecting the at least one antenna modifying element with the antenna device when the first and second ends are fastened. In another embodiment, a deformation detector detects at least one deformation of the mobile terminal, an antenna matching unit is electrically connectable to the first antenna radiator; and a controller is coupled to the deformation detector, for controlling an electrical connection between the antenna matching unit and the first antenna radiator when the at least one deformation is detected. The antenna matching unit may include a second antenna radiator.

Antenna apparatus for mobile terminal

An example antenna device may includes a base member, an antenna that is attached to the base member, and a cover member that is attached to surround at least a part of the base member and at least a part of the antenna. A first part of the base member that is attached to the cover member has a melting temperature equal to or lower than that of the cover member. A second part of the base member to which the antenna is attached has a higher melting temperature than the cover member.

Antenna device and manufacturing method thereof

A semiconductor device may include: a semiconductor substrate comprising a plurality of active regions and a device isolation region for isolating the plurality of active regions; and a conductive shield pillar formed in the device isolation region and connected to the semiconductor substrate. Each of the active regions may include: a body portion formed in the substrate; a pillar floating from the body portion and positioned over the body portion; a side portion provided over a side surface of the pillar and connected to the body portion; and an embedded spacer positioned between the side portion and the pillar, the pillar may be coupled to the substrate through the side portion.

Semiconductor device having air gap, a method for manufacturing the same, a memory cell having the same and an electronic device having the same

A semiconductor device includes a field regions in a substrate to define active regions, gate trenches including active trenches disposed across the active region and field trenches in the field regions, and word lines that fill the gate trenches and extend in a first direction. The word lines include active gate electrodes occupying the active trenches, and field gate electrodes occupying the field trenches. The bottom surface of each field gate electrode, which is disposed between active regions that are adjacent to each other and have one word line therebetween, is disposed at a higher level than the bottom surfaces of the active gate electrodes.

Semiconductor device having buried channel array

Growing community of inventors

Seoul, South Korea

Seung-Hwan Kim