Samsung Electronics Co., Ltd.

Seung Hune Yang

Yong Hoon Kim

Min-Cheol Kang

Soo Yong Lee

Shun Yong Zinn

Jee Yong Lee

U Seong Kim

A process proximity correction method is performed by a process proximity correction computing device which performs a process proximity correction (PPC) through at least one of a plurality of processors. The process proximity correction method includes: converting a target layout including a plurality of patterns into an image, zooming-in or zooming-out the image at a plurality of magnifications to generate a plurality of input channels, receiving the plurality of input channels and performing machine learning to predict an after-cleaning image (ACI), comparing the predicted after-cleaning image with a target value to generate an after-cleaning image error, and adjusting the target layout on the basis of the after-cleaning image error.

Process proximity correction method and the computing device for the same

An exposure method and apparatus for use in exposing a photoresist on a semiconductor wafer do not employ an aperture for shaping the exposure light. The exposure apparatus includes a light source unit, a reflecting mirror unit having a micro mirror array (MMA) and a control unit that controls the MMA, and a pattern transfer unit that transfers the pattern of a photomask onto the photoresist. The angles of inclination of the respective mirrors of the MMA are adjusted to reflect incident light in a manner that shapes the incident light. Accordingly, it is possible to form a pattern having the highest degree of resolution and optimum depth of focus (DOF) in the shortest amount of processing time.

Exposure apparatus including micro mirror array and exposure method using the same

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Sungnam, South Korea

Seung Hune Yang