Semes Co., Ltd.

Sts Semiconductor & Telecommunications Co., Ltd.

Seung Hoon Oh

Young Hun Lee

Jin Mo Jae

Sang Min Lee

Gui Su Park

Sun Choi

Mi So Park

Jong Hyeon Woo

Tae Jin Kim

Young Jin Kim

Young Jun Choi

Hong Chan Kim

Jin Woo Jung

Yong Seung Kim

Jungbong Choi

Ji Min Kim

Jin Tack Yu

Youngil Lee

Yong Hyun Choi

Youngseop Choi

Jonghyeon Woo

Jong Doo Lee

Bu Young Jung

Byung Sun Bang

Yong Joon Im

Inhwang Park

Suk Joon Kim

Deuk Soo Park

Dae Hyun Choo

Gyung Rok Kim

DaeSik Choi

Jin Hong Kim

Yong Woon Kim

Yong Sun Ko

Byungsun Bang

Hyo Won Yang

Ye Jin Choi

Gil Hun Song

Hee Young Kim

Kangseop Yun

Young Seop Choi

Il Yong Jeong

Jonghan Kim

Jae Wook Ryu

Young Ki Park

Seungho Lee

Tae Young Jang

Tae Jong Choi

Na Young Kang

Won Choon Choi

Chul Wee Lee

Bu Sub Song

Sang Ho Lee

Gyoo Tae Kim

Yong Il Lee

Sun Hyuk Bae

Kyung Seok Noh

An apparatus for treating the substrate includes a process chamber having a first body and a second body which are combined with each other to have a treating space in which a substrate is treated, and a friction prevention member placed on a contact surface between the first body and the second body. The friction prevention member may have a groove formed at a surface corresponding to the contact surface. An adhesive for adhering the friction prevention member to the first body or adhering the friction prevention member to the second body may be provided in the groove. The groove may form an open-end pattern in which a first end of the open-end pattern is adjacent to a second end of the open-end pattern.

Apparatus for treating substrate

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing for providing a treating space for treating a substrate within; a support unit for supporting the substrate in the treating space; a bottom supply port for supplying a process fluid to the treating space; and a filler member positioned below the substrate supported on the support unit in the treating space, and wherein the filler member forms a buffer space facing the bottom supply port, and a passage is formed between the filler member and an inner wall of the housing and flows the process fluid which is introduced to the buffer space in a direction of the substrate.

The inventive concept provides a support unit for supporting a substrate. The support unit includes a support plate that has an interior space and on which the substrate is placed, a heating member that is provided in the interior space and that heats the substrate placed on the support plate, a heat insulating plate provided in the interior space and disposed under the heating member, a reflective plate provided in the interior space and disposed under the heat insulating plate, and a heat dissipation plate provided in the interior space and disposed under the a reflective plate.

Support unit, substrate treating apparatus including the same, and substrate treating method

The present invention provides a method for treating a substrate. The method for treating a substrate comprises: treating the substrate with liquid; and drying the liquid-treated substrate, and the liquid treatment step includes: a first liquid supply step of supplying a first liquid to an upper surface of the rotating substrate; and a second liquid supply step of supplying a second liquid to an upper surface of the rotating substrate, and in the second liquid supply step, a rotation speed of the substrate is adjusted such that the second liquid supplied on the substrate flows from a central region of the substrate to an edge region of the substrate.

Apparatus for treating substrate and method for treating substrate

An apparatus for treating a substrate includes a vessel having a sealable process space formed therein in which the substrate is accommodated, a supply port that is provided inside a wall of the vessel and that supplies a process fluid into the process space, an exhaust port provided inside the wall of the vessel and spaced apart from the supply port, and a buffer member provided in the process space, the buffer member being provided in a position overlapping with the supply port and the exhaust port when viewed from above. The buffer member includes a sidewall portion that is located outward of the supply port and the exhaust port and that makes contact with the wall of the vessel and an upper wall portion having a through-hole formed therein to correspond to a center of the substrate, the through-hole forming a straight flow path in an up/down direction.

Substrate treating apparatus and filler member provided therein

A substrate processing apparatus includes a process chamber including a first body and a second body that are coupled to each other to form a processing space therein, a clamping member configured to clamp the first body and the second body, and an anti-friction member mounted in a groove formed in a contact region between the first body or the second body and the clamping member.

Substrate processing apparatus

A sealing member for use in sealing a chamber for treating a substrate, the sealing member inserted in a groove formed in the chamber, includes a bottom part, a top part opposite the bottom part, an inner part connecting a first side of the bottom part to the top part, an outer part opposite the inner part and connecting a second side of the bottom part to the top part, and a recessed portion between the top part and the outer part.

Sealing member and apparatus for treating substrate

An apparatus for treating a substrate includes a process chamber having a treatment space for treating the substrate; a fluid supply unit for supplying fluid to the treatment space, wherein the fluid supply unit includes: a supply pipe connected to the treatment space to supply the fluid to the treatment space; a pump installed in the supply pipe to provide flow pressure to the fluid; a vent line installed between the pump and the process chamber to discharge pressure in the fluid to an outside; a relief valve installed in the vent line to open and close the vent line; and a reservoir installed between the pump and a branch point wherein the vent line branches from the supply pipe, wherein the reservoir has a cross-sectional area larger than a cross-sectional area of a portion of the supply pipe located between the pump and the branch point.

Fluid supply unit and substrate treating apparatus having the same

An apparatus for supporting a substrate includes a rotatable spin head that supports the substrate, a hollow shaft that is connected with the spin head and that transmits torque to the spin head, a nozzle assembly that is disposed in an interior space of the spin head so as not to rotate and that supplies a treatment liquid to a backside of the substrate, and a sealing member that seals a gap between the spin head and the nozzle assembly using a magnetic fluid.

Substrate support unit and substrate treating apparatus having the same

A substrate treating apparatus and a substrate treating method are provided. The substrate treating apparatus includes a support member to support a substrate, a treatment liquid nozzle to supply a treatment liquid to the substrate positioned on the support member, and a controller to control the treatment liquid nozzle such that the treatment liquid supplied to the substrate is differently discharged in a low-flow-supply section and a high-flow-supply section in which an average discharge amount per hour is more than an average discharge amount per hour in the low-flow-supply section.

Substrate treating apparatus and substrate treating method

A substrate processing method includes forming a high surface tension liquid film by supplying high surface tension liquid on a substrate surface, replacing the high surface tension liquid film with low surface tension liquid by supplying the low surface tension liquid to a center area of a substrate so that the low surface tension liquid impinges on the high surface tension liquid film formed on the center area of the substrate, and supplying high surface tension liquid for a predetermined period of time during the supplying the low surface tension liquid.

Substrate processing method and substrate processing apparatus

An embodiment of the present invention provides a substrate processing method. The substrate processing method, which performs a liquid processing process by injecting a processing liquid on a substrate on a spin chuck disposed inside a plurality of recovery cups that are disposed in multiple layers, includes: in a transitional period of time in which height change of any one of the recovery cups occurs, adjusting rotational speed of the spin chuck, which is configured to support the substrate, in conjunction with the height change of the recovery cup.

Method and apparatus for processing substrate

A stacked integrated circuit package and a method for manufacturing the same are provided. The stacked integrated circuit package includes a first integrated circuit package comprising a first substrate, a first semiconductor chip, and a first molding portion, an interposer mounted on the first substrate to be electrically connected to the circuit pattern of the first substrate by a first solder bump, the interposer being provided with an opening to accommodate the first semiconductor chip, and a second integrated circuit package stacked on the first integrated circuit package and the interposer and electrically connected to the interposer by a second solder bump, the second integrated circuit package comprising a second substrate, a second semiconductor chip, and a second molding portion.

Integrated circuit package and method for manufacturing the same

Growing community of inventors

Cheonan-si, South Korea

Seung Hoon Oh