Samsung Electronics Co., Ltd.

Seung Hoon Oh

Jong Ho Lee

Hyun Jun Jung

Sang Hak Kim

Su Yeon Doo

Tae Young Oh

Kwang Il Park

Eun Serb An

Sang Bong Jeon

A method of operating a semiconductor memory device is provided as follows. The semiconductor memory device receive a bank address for a first bank including a first word line, a second word line and a third word line. The semiconductor memory device receive a first row address to activate the first world line for a read operation or a write operation. The semiconductor memory device generates a second row address to refresh a plurality of memory cells associated with the second word line.

Semiconductor memory device and memory system including same

A supporting device includes a support, serving to support a main body of the display unit, formed by injection molding using a transparent material. A display unit includes the supporting device. The display unit includes a main body having a screen and a supporting device to support the main body. The supporting device includes a support connected to the main body and a stand connected to the lower part of the support. The support includes a transparent member formed by injection molding using a transparent material. The transparent member is disposed between the main body and the stand to support the display unit, and is formed by insert injection molding.

Supporting device for display unit and display unit having the same

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Yongin-si, South Korea

Seung Hoon Oh