Intel Corporation

Seung Hoon Hoon Sung

Marko Radosavljevic

Han Wui Then

Sansaptak W Dasgupta

Benjamin Chu-Kung

Sanaz Kabehie Gardner

Robert S Chau

Ravi Pillarisetty

Matthew V Metz

Van H Le

Sherry R Taft

Techniques are disclosed for forming a defect-free semiconductor structure on a dissimilar substrate with a multi-aspect ratio mask. The multi-aspect ratio mask comprises a first, second, and third layer formed on a substrate. The second layer has a second opening wider than a first opening and a third opening in the first and third layers, respectively. All three openings are centered along a common central axis. A semiconductor material is grown from the top surface of the substrate and laterally onto the top surface of the first layer within the second opening. The semiconductor material disposed within and vertically below the third opening is etched by using the third layer as an etch mask so that the remaining material that laterally overflowed onto the top surface of the first layer forms a remaining structure.

Method of fabricating semiconductor structures on dissimilar substrates

Techniques are disclosed for forming a GaN transistor on a semiconductor substrate. An insulating layer forms on top of a semiconductor substrate. A trench, filled with a trench material comprising a III-V semiconductor material, forms through the insulating layer and extends into the semiconductor substrate. A channel structure, containing III-V material having a defect density lower than the trench material, forms directly on top of the insulating layer and adjacent to the trench. A source and drain form on opposite sides of the channel structure, and a gate forms on the channel structure. The semiconductor substrate forms a plane upon which both GaN transistors and other transistors can form.

Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof

Growing community of inventors

Potland, OR, United States of America

Seung Hoon Hoon Sung