Skhynix Inc.

Seung-Ho Pyi

Min-Soo Kim

Sung-Jin Whang

Dong-Sun Sheen

A nonvolatile memory device includes a substrate; a channel layer projecting from a surface of the substrate, in a direction perpendicular to the surface; a tunnel dielectric layer surrounding the channel layer; a plurality of interlayer dielectric layers and a plurality of control gate electrodes alternately formed along the channel layer; floating gate electrodes interposed between the tunnel dielectric layer and the plurality of control gate electrodes, the floating gate electrodes comprising a metal-semiconductor compound; and a charge blocking layer interposed between each of the plurality of control gate electrodes and each of the plurality of floating gate electrodes.

Nonvolatile memory device and method for fabricating the same

A non-volatile memory device includes a channel layer vertically extending from a substrate, a plurality of inter-layer dielectric layers and a plurality of gate electrodes that are alternately stacked along the channel layer, and an air gap interposed between the channel layer and each of the plurality of gate electrodes. The non-volatile memory device may improve erase operation characteristics by suppressing back tunneling of electrons by substituting a charge blocking layer interposed between a gate electrode and a charge storage layer with an air gap, and a method for fabricating the non-volatile memory device.

Non-volatile memory device and method for fabricating the same

A nonvolatile memory device includes a substrate including a surface, a channel layer formed on the surface of the substrate, which protrudes perpendicularly from the surface, and a plurality of interlayer dielectric layers and a plurality of gate electrode layers alternately stacked along the channel layer, wherein the plurality of gate electrode layers protrude from the plurality of interlayer dielectric layers.

Growing community of inventors

Gyeonggi-do, South Korea

Seung-Ho Pyi