Skhynix Inc.

Hynix Semiconductor Inc.

Micron Technology Incorporated

Siltron, Inc.

Seung Ho Pyi

Ki Hong Lee

Jin Ho Bin

Ji Yeon Baek

Seok Min Jeon

In Su Park

Il Young Kwon

Seung Jun Lee

Hyun Soo Shon

Yong Soo Kim

Moon Sig Joo

Sung Ik Moon

Soo Jin Kim

Il Do Kim

Heung Jae Cho

Ki Seon Park

Sung Chul Shin

Kun Kim

Chung Geun Koh

Young Hee Mun

Jung Yun Chang

Oh Chul Kwon

Kwon Hong

Min Soo Kim

Se Aug Jang

Dong Sun Sheen

Kwan Yong Lim

Yong Hyun Lim

Hong Seon Yang

Sung Jin Whang

Min Gyu Sung

Yong Top Kim

Tae Yoon Kim

Ii Young Kwon

Seung Ryong Lee

A method for manufacturing an electronic device includes forming a first source layer including a trench, forming a first sacrificial layer in the trench, forming a first structure over the first source layer, wherein the first structure includes first material layers and second material layers which are alternately stacked over the each other, forming first openings passing through the first structure and extending to the first sacrificial layer, forming first channel layers in the first openings, forming a slit passing through the first structure and extending to the first sacrificial layer, forming a second opening by removing the first sacrificial layer through the slit, and forming a second source layer in the second opening, wherein the second source layer is coupled to the first channel layers.

Electronic device having stacked structures and method for manufacturing the same

A semiconductor device includes a first stacked structure having first conductive layers and first insulating layers formed alternately with each other, first semiconductor patterns passing through the first stacked structure, a coupling pattern coupled to the first semiconductor patterns, and a slit passing through the first stacked structure and the coupling pattern.

Semiconductor device and method of manufacturing the same

Provided herein a semiconductor device including a stack including conductive layers and insulating layers that are alternately stacked, and a slit insulating layer passing through the stack in a stacking direction, the slit insulating layer including a first main pattern extending in a first direction, and a first protruding pattern protruding in a second direction crossing the first direction at an end of the first main pattern.

3D semiconductor memory device

A semiconductor device includes a first conductive layer, at least one first slit through the first conductive layer, and configured to divide the first conductive layer in the unit of a memory block, second conductive layers stacked on the first conductive layer, and a second slit through the second conductive layers at a different location from the first slit and configured to divide the second conductive layers in the unit of the memory block.

Method of manufacturing a semiconductor device having non-overlapping slits at one side of the channel layers of a memory block

A 3D structured nonvolatile semiconductor memory devices and methods for manufacturing are disclosed. One such device includes an n+ region at a source/drain region; a p+ region at the source/drain region; and a diffusion barrier material between the n+ region and the p+ region. The n+ region is substantially isolated from the p+ region.

Three-dimensional structured memory devices

A semiconductor device includes a cell structure; n first pad structures formed on one side of the cell structure and each configured to have a step form in which 2n layers form one stage; and n second pad structures formed on the other side of the cell structure each configured to have a step form in which 2n layers form one stage, wherein n is a natural number of 1 or higher, and the first pad structures and the second pad structures have asymmetrical step forms having different heights.

Electronic device and method for manufacturing the same

Provided herein a semiconductor device including a stack including conductive layers and insulating layers that are alternately stacked, and a slit insulating layer passing through the stack in a stacking direction, the slitinsulating layer including a first main pattern extending in a first direction, and a first protruding pattern protruding in a second direction crossing the first direction at an end of the first main pattern.

Semiconductor devices with non-overlapping slits in-between memory blocks

Growing community of inventors

Seongnam-si, South Korea

Seung Ho Pyi